A submicron PHEMT nonlinear model suitable for RFID low current amplifier design

Jianjun Gao; Choi Look Law; Hong Wang; Sheel Aditya; Zhongxiang Shen

doi:10.1080/00207210310001621518

A submicron PHEMT nonlinear model suitable for RFID low current amplifier design

Jianjun Gao^*
, Choi Look Law
, Hong Wang
, Sheel Aditya
, Zhongxiang Shen

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The development of nonlinear pseudomorphic high electron mobility transistors (PHEMT) model up to 40 GHz suitable for radio frequency identification (RFID) low current applications was described. Good agreement was obtained between simulation results and measured results for the PHEMT device and 2.45 GHz and 5.8 GHz amplifier performances. The model was found to be suitable for implementation into Agilent ADS to perform various analyses of PHEMT.

Original language	English
Pages (from-to)	433-443
Number of pages	11
Journal	International Journal of Electronics
Volume	90
Issue number	7
DOIs	https://doi.org/10.1080/00207210310001621518
State	Published - Jul 2003
Externally published	Yes

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title = "A submicron PHEMT nonlinear model suitable for RFID low current amplifier design",

abstract = "The development of nonlinear pseudomorphic high electron mobility transistors (PHEMT) model up to 40 GHz suitable for radio frequency identification (RFID) low current applications was described. Good agreement was obtained between simulation results and measured results for the PHEMT device and 2.45 GHz and 5.8 GHz amplifier performances. The model was found to be suitable for implementation into Agilent ADS to perform various analyses of PHEMT.",

author = "Jianjun Gao and Law, \{Choi Look\} and Hong Wang and Sheel Aditya and Zhongxiang Shen",

year = "2003",

month = jul,

doi = "10.1080/00207210310001621518",

language = "英语",

volume = "90",

pages = "433--443",

journal = "International Journal of Electronics",

issn = "0020-7217",

publisher = "Taylor and Francis Ltd.",

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T1 - A submicron PHEMT nonlinear model suitable for RFID low current amplifier design

AU - Gao, Jianjun

AU - Law, Choi Look

AU - Wang, Hong

AU - Aditya, Sheel

AU - Shen, Zhongxiang

PY - 2003/7

Y1 - 2003/7

N2 - The development of nonlinear pseudomorphic high electron mobility transistors (PHEMT) model up to 40 GHz suitable for radio frequency identification (RFID) low current applications was described. Good agreement was obtained between simulation results and measured results for the PHEMT device and 2.45 GHz and 5.8 GHz amplifier performances. The model was found to be suitable for implementation into Agilent ADS to perform various analyses of PHEMT.

AB - The development of nonlinear pseudomorphic high electron mobility transistors (PHEMT) model up to 40 GHz suitable for radio frequency identification (RFID) low current applications was described. Good agreement was obtained between simulation results and measured results for the PHEMT device and 2.45 GHz and 5.8 GHz amplifier performances. The model was found to be suitable for implementation into Agilent ADS to perform various analyses of PHEMT.

UR - https://www.scopus.com/pages/publications/0242468036

U2 - 10.1080/00207210310001621518

DO - 10.1080/00207210310001621518

M3 - 文章

AN - SCOPUS:0242468036

SN - 0020-7217

VL - 90

SP - 433

EP - 443

JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 7

ER -

A submicron PHEMT nonlinear model suitable for RFID low current amplifier design

Abstract

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