A study on ionic gated MoS2 phototransistors

Binmin Wu; Xudong Wang; Hongwei Tang; Tie Lin; Hong Shen; Weida Hu; Xiangjian Meng; Wenzhong Bao; Jianlu Wang; Junhao Chu

doi:10.1007/s11432-019-1472-6

A study on ionic gated MoS₂ phototransistors

Binmin Wu
, Xudong Wang
, Hongwei Tang
, Tie Lin
, Hong Shen
, Weida Hu
, Xiangjian Meng
, Wenzhong Bao
, Jianlu Wang^*
, Junhao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Molybdenum disulfide (MoS₂) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS₂ using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an MoS₂ phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS₂ and source/drain electrodes can be widely regulated from 11 to 179 meV. The MoS₂ phototransistor exhibits excellent responsivity of 2.68 × 10⁴ A/W and detectivity of 9.6 × 10¹⁰ Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.

Original language	English
Article number	220405
Journal	Science China Information Sciences
Volume	62
Issue number	12
DOIs	https://doi.org/10.1007/s11432-019-1472-6
State	Published - 1 Dec 2019
Externally published	Yes

Keywords

MoS phototransistor
Schottky barrier
electric double layer
electrolyte-gel gating
two-dimensional materials

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10.1007/s11432-019-1472-6

Cite this

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title = "A study on ionic gated MoS2 phototransistors",

abstract = "Molybdenum disulfide (MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an MoS2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2 and source/drain electrodes can be widely regulated from 11 to 179 meV. The MoS2 phototransistor exhibits excellent responsivity of 2.68 × 104 A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.",

keywords = "MoS phototransistor, Schottky barrier, electric double layer, electrolyte-gel gating, two-dimensional materials",

author = "Binmin Wu and Xudong Wang and Hongwei Tang and Tie Lin and Hong Shen and Weida Hu and Xiangjian Meng and Wenzhong Bao and Jianlu Wang and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2019, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature.",

year = "2019",

month = dec,

day = "1",

doi = "10.1007/s11432-019-1472-6",

language = "英语",

volume = "62",

journal = "Science China Information Sciences",

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T1 - A study on ionic gated MoS2 phototransistors

AU - Wu, Binmin

AU - Wang, Xudong

AU - Tang, Hongwei

AU - Lin, Tie

AU - Shen, Hong

AU - Hu, Weida

AU - Meng, Xiangjian

AU - Bao, Wenzhong

AU - Wang, Jianlu

AU - Chu, Junhao

PY - 2019/12/1

Y1 - 2019/12/1

N2 - Molybdenum disulfide (MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an MoS2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2 and source/drain electrodes can be widely regulated from 11 to 179 meV. The MoS2 phototransistor exhibits excellent responsivity of 2.68 × 104 A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.

AB - Molybdenum disulfide (MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an MoS2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2 and source/drain electrodes can be widely regulated from 11 to 179 meV. The MoS2 phototransistor exhibits excellent responsivity of 2.68 × 104 A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.

KW - MoS phototransistor

KW - Schottky barrier

KW - electric double layer

KW - electrolyte-gel gating

KW - two-dimensional materials

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DO - 10.1007/s11432-019-1472-6

M3 - 文章

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SN - 1674-733X

VL - 62

JO - Science China Information Sciences

JF - Science China Information Sciences

IS - 12

M1 - 220405

ER -

A study on ionic gated MoS₂ phototransistors

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Keywords

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