A study of oxygen ion implantation into ferroelectric Pb(Zr,Ti)O3 films

L. R. Zheng; P. X. Yang; L. W. Wang; C. L. Lin; S. C. Zou

doi:10.1016/S0168-583X(96)01135-4

A study of oxygen ion implantation into ferroelectric Pb(Zr,Ti)O₃ films

L. R. Zheng, P. X. Yang, L. W. Wang, C. L. Lin, S. C. Zou

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Oxygen ions with 40 keV energy and doses of 1 × 10¹² to 5 × 10¹⁴/cm² were implanted into ferroelectric Pb(Zr,Ti)O₃ (PZT) thin films. X-ray diffraction patterns show that no obvious difference appears in the crystalline structure of PZT films before and after implantation; however, measurement of electrical properties shows that both remanent polarization and dielectric constant of the film decrease with increase of the implanted ion dose. The PZT film will completely become a linear dielectric if the implanted ion dose increases to 5 × 10¹⁴/cm². A possible mechanism for the loss of remanent polarization after ion implantation is proposed.

Original language	English
Pages (from-to)	621-623
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	127-128
DOIs	https://doi.org/10.1016/S0168-583X(96)01135-4
State	Published - May 1997
Externally published	Yes

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title = "A study of oxygen ion implantation into ferroelectric Pb(Zr,Ti)O3 films",

abstract = "Oxygen ions with 40 keV energy and doses of 1 × 1012 to 5 × 1014/cm2 were implanted into ferroelectric Pb(Zr,Ti)O3 (PZT) thin films. X-ray diffraction patterns show that no obvious difference appears in the crystalline structure of PZT films before and after implantation; however, measurement of electrical properties shows that both remanent polarization and dielectric constant of the film decrease with increase of the implanted ion dose. The PZT film will completely become a linear dielectric if the implanted ion dose increases to 5 × 1014/cm2. A possible mechanism for the loss of remanent polarization after ion implantation is proposed.",

author = "Zheng, \{L. R.\} and Yang, \{P. X.\} and Wang, \{L. W.\} and Lin, \{C. L.\} and Zou, \{S. C.\}",

year = "1997",

month = may,

doi = "10.1016/S0168-583X(96)01135-4",

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T1 - A study of oxygen ion implantation into ferroelectric Pb(Zr,Ti)O3 films

AU - Zheng, L. R.

AU - Yang, P. X.

AU - Wang, L. W.

AU - Lin, C. L.

AU - Zou, S. C.

PY - 1997/5

Y1 - 1997/5

N2 - Oxygen ions with 40 keV energy and doses of 1 × 1012 to 5 × 1014/cm2 were implanted into ferroelectric Pb(Zr,Ti)O3 (PZT) thin films. X-ray diffraction patterns show that no obvious difference appears in the crystalline structure of PZT films before and after implantation; however, measurement of electrical properties shows that both remanent polarization and dielectric constant of the film decrease with increase of the implanted ion dose. The PZT film will completely become a linear dielectric if the implanted ion dose increases to 5 × 1014/cm2. A possible mechanism for the loss of remanent polarization after ion implantation is proposed.

AB - Oxygen ions with 40 keV energy and doses of 1 × 1012 to 5 × 1014/cm2 were implanted into ferroelectric Pb(Zr,Ti)O3 (PZT) thin films. X-ray diffraction patterns show that no obvious difference appears in the crystalline structure of PZT films before and after implantation; however, measurement of electrical properties shows that both remanent polarization and dielectric constant of the film decrease with increase of the implanted ion dose. The PZT film will completely become a linear dielectric if the implanted ion dose increases to 5 × 1014/cm2. A possible mechanism for the loss of remanent polarization after ion implantation is proposed.

UR - https://www.scopus.com/pages/publications/0031547746

U2 - 10.1016/S0168-583X(96)01135-4

DO - 10.1016/S0168-583X(96)01135-4

M3 - 文章

AN - SCOPUS:0031547746

SN - 0168-583X

VL - 127-128

SP - 621

EP - 623

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

A study of oxygen ion implantation into ferroelectric Pb(Zr,Ti)O₃ films

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