A stable porous silicon dielectric reflector with a photonic band gap centred at 10μm

Jie Zhang; Shao Hui Xu; Shi Qian Yang; Lian Wei Wang; Zhi Shen Cao; Peng Zhan; Zhen Lin Wang

doi:10.1088/0256-307X/25/4/042

A stable porous silicon dielectric reflector with a photonic band gap centred at 10μm

Jie Zhang^*
, Shao Hui Xu
, Shi Qian Yang
, Lian Wei Wang
, Zhi Shen Cao
, Peng Zhan
, Zhen Lin Wang

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12 μm). After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8μm to 12μm (centred at 10μm) within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.

Original language	English
Pages (from-to)	1317-1320
Number of pages	4
Journal	Chinese Physics Letters
Volume	25
Issue number	4
DOIs	https://doi.org/10.1088/0256-307X/25/4/042
State	Published - 1 Apr 2008

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title = "A stable porous silicon dielectric reflector with a photonic band gap centred at 10μm",

abstract = "By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12 μm). After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8μm to 12μm (centred at 10μm) within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.",

author = "Jie Zhang and Xu, \{Shao Hui\} and Yang, \{Shi Qian\} and Wang, \{Lian Wei\} and Cao, \{Zhi Shen\} and Peng Zhan and Wang, \{Zhen Lin\}",

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doi = "10.1088/0256-307X/25/4/042",

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TY - JOUR

T1 - A stable porous silicon dielectric reflector with a photonic band gap centred at 10μm

AU - Zhang, Jie

AU - Xu, Shao Hui

AU - Yang, Shi Qian

AU - Wang, Lian Wei

AU - Cao, Zhi Shen

AU - Zhan, Peng

AU - Wang, Zhen Lin

PY - 2008/4/1

Y1 - 2008/4/1

N2 - By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12 μm). After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8μm to 12μm (centred at 10μm) within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.

AB - By pulsed anodic etching at low temperature, we prepared a porous silicon reflector with a photonic band gap centred in the long-wavelength infrared spectral region (centred at about 12 μm). After proper oxidation process, the stable reflector structure, which can reflect electromagnetic wave from 8μm to 12μm (centred at 10μm) within wide incidence angles (about 50°), is obtained. The wavelength shift of absorption peak of Si-H and Si-O shows the influence of oxidation process and indicates the stability of oxidized porous silicon dielectric reflector, which offers possible applications for the room temperature infrared sensor.

UR - https://www.scopus.com/pages/publications/43049083729

U2 - 10.1088/0256-307X/25/4/042

DO - 10.1088/0256-307X/25/4/042

M3 - 文章

AN - SCOPUS:43049083729

SN - 0256-307X

VL - 25

SP - 1317

EP - 1320

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 4

ER -

A stable porous silicon dielectric reflector with a photonic band gap centred at 10μm

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