A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency

Jiahua Tao; Kezhi Zhang; Chuanjun Zhang; Leilei Chen; Huiyi Cao; Junfeng Liu; Jinchun Jiang; Lin Sun; Pingxiong Yang; Junhao Chu

doi:10.1039/c5cc01170a

A sputtered CdS buffer layer for co-electrodeposited Cu₂ZnSnS₄ solar cells with 6.6% efficiency

Jiahua Tao
, Kezhi Zhang
, Chuanjun Zhang
, Leilei Chen
, Huiyi Cao
, Junfeng Liu
, Jinchun Jiang
, Lin Sun^*
, Pingxiong Yang
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

88 Scopus citations

Abstract

Cu₂ZnSnS₄ thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.

Original language	English
Pages (from-to)	10337-10340
Number of pages	4
Journal	Chemical Communications
Volume	51
Issue number	51
DOIs	https://doi.org/10.1039/c5cc01170a
State	Published - 28 Jun 2015

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10.1039/c5cc01170a

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title = "A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6\% efficiency",

abstract = "Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6\%.",

author = "Jiahua Tao and Kezhi Zhang and Chuanjun Zhang and Leilei Chen and Huiyi Cao and Junfeng Liu and Jinchun Jiang and Lin Sun and Pingxiong Yang and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2015",

month = jun,

day = "28",

doi = "10.1039/c5cc01170a",

language = "英语",

volume = "51",

pages = "10337--10340",

journal = "Chemical Communications",

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publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - A sputtered CdS buffer layer for co-electrodeposited Cu2ZnSnS4 solar cells with 6.6% efficiency

AU - Tao, Jiahua

AU - Zhang, Kezhi

AU - Zhang, Chuanjun

AU - Chen, Leilei

AU - Cao, Huiyi

AU - Liu, Junfeng

AU - Jiang, Jinchun

AU - Sun, Lin

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2015/6/28

Y1 - 2015/6/28

N2 - Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.

AB - Cu2ZnSnS4 thin films with thicknesses ranging from 0.35 to 1.85 μm and micron-sized grains (0.5-1.5 μm) were synthesized using co-electrodeposited Cu-Zn-Sn-S precursors with different deposition times. Here we have introduced a sputtered CdS buffer layer for the development of CZTS solar cells for the first time, which enables breakthrough efficiencies up to 6.6%.

UR - https://www.scopus.com/pages/publications/84935841988

U2 - 10.1039/c5cc01170a

DO - 10.1039/c5cc01170a

M3 - 文章

AN - SCOPUS:84935841988

SN - 1359-7345

VL - 51

SP - 10337

EP - 10340

JO - Chemical Communications

JF - Chemical Communications

IS - 51

ER -

A sputtered CdS buffer layer for co-electrodeposited Cu₂ZnSnS₄ solar cells with 6.6% efficiency

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