Abstract
A unique configuration of PbZr0.4Ti0.6O3 multilayer stack was designed and grown on F-doped tin oxide thin film by spin casting and annealing process. The multilayer system exhibits a broad reflection band with peak reflectivity over 95% and band width no < 40 nm, a dielectric constant of 520 and dielectric tunability of ∼49% at 1 MHz, a remanent polarization of 46.8 μC/cm2, and a polarization loss of < 5% after 109 polarization switching cycles, rendering excellent performance as 1D photonic crystals and as ferroelectric and dielectric media. This material structure may find application in photonic band-gap engineering, microwave tunable devices, and integrated optoelectronics.
| Original language | English |
|---|---|
| Pages (from-to) | 2761-2763 |
| Number of pages | 3 |
| Journal | Journal of the American Ceramic Society |
| Volume | 94 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2011 |
| Externally published | Yes |