A small-signal equivalent-circuit model of quantum-well lasers based on three-level rate equations

Gao Jianjun; Gao Baoxin; Liang Chunguang

doi:10.1002/mop.1287

A small-signal equivalent-circuit model of quantum-well lasers based on three-level rate equations

Gao Jianjun^*
, Gao Baoxin
, Liang Chunguang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

An intrinsic equivalent-circuit model for quantum-well lasers is presented. The model is based on the three-level rate equations, and includes the carrier transport effects and the role of the gateway state at the quantum well. The simulation results of the frequency response are compared with experimentally obtained data, and agreement is obtained consistently on separate confinement heterostructures (SCHs) of different sizes.

Original language	English
Pages (from-to)	270-271
Number of pages	2
Journal	Microwave and Optical Technology Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1002/mop.1287
State	Published - 20 Aug 2001
Externally published	Yes

Keywords

Equivalent-circuit models
Quantum-well laser

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10.1002/mop.1287

Cite this

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title = "A small-signal equivalent-circuit model of quantum-well lasers based on three-level rate equations",

abstract = "An intrinsic equivalent-circuit model for quantum-well lasers is presented. The model is based on the three-level rate equations, and includes the carrier transport effects and the role of the gateway state at the quantum well. The simulation results of the frequency response are compared with experimentally obtained data, and agreement is obtained consistently on separate confinement heterostructures (SCHs) of different sizes.",

keywords = "Equivalent-circuit models, Quantum-well laser",

author = "Gao Jianjun and Gao Baoxin and Liang Chunguang",

year = "2001",

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AU - Jianjun, Gao

AU - Baoxin, Gao

AU - Chunguang, Liang

PY - 2001/8/20

Y1 - 2001/8/20

N2 - An intrinsic equivalent-circuit model for quantum-well lasers is presented. The model is based on the three-level rate equations, and includes the carrier transport effects and the role of the gateway state at the quantum well. The simulation results of the frequency response are compared with experimentally obtained data, and agreement is obtained consistently on separate confinement heterostructures (SCHs) of different sizes.

AB - An intrinsic equivalent-circuit model for quantum-well lasers is presented. The model is based on the three-level rate equations, and includes the carrier transport effects and the role of the gateway state at the quantum well. The simulation results of the frequency response are compared with experimentally obtained data, and agreement is obtained consistently on separate confinement heterostructures (SCHs) of different sizes.

KW - Equivalent-circuit models

KW - Quantum-well laser

UR - https://www.scopus.com/pages/publications/0035921123

U2 - 10.1002/mop.1287

DO - 10.1002/mop.1287

M3 - 文章

AN - SCOPUS:0035921123

SN - 0895-2477

VL - 30

SP - 270

EP - 271

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 4

ER -

A small-signal equivalent-circuit model of quantum-well lasers based on three-level rate equations

Abstract

Keywords

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