A single-event transient induced by a pulsed laser in a silicon - Germanium heterojunction bipolar transistor

Ya Bin Sun; Jun Fu; Jun Xu; Yu Dong Wang; Wei Zhou; Wei Zhang; Jie Cui; Gao Qing Li; Zhi Hong Liu; Yong Tao Yu; Ying Qi Ma; Guo Qiang Feng; Jian Wei Han

doi:10.1088/1674-1056/22/5/056103

A single-event transient induced by a pulsed laser in a silicon - Germanium heterojunction bipolar transistor

Ya Bin Sun, Jun Fu, Jun Xu, Yu Dong Wang, Wei Zhou, Wei Zhang, Jie Cui, Gao Qing Li, Zhi Hong Liu, Yong Tao Yu, Ying Qi Ma, Guo Qiang Feng, Jian Wei Han

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

Original language	English
Article number	056103
Journal	Chinese Physics B
Volume	22
Issue number	5
DOIs	https://doi.org/10.1088/1674-1056/22/5/056103
State	Published - May 2013
Externally published	Yes

Keywords

SiGe heterojunction bipolar transistor (HBT)
pulsed laser, charge collection
single event transient (SET)

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10.1088/1674-1056/22/5/056103

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@article{64c7b4f896464784a117f6bebd79d552,

title = "A single-event transient induced by a pulsed laser in a silicon - Germanium heterojunction bipolar transistor",

abstract = "A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.",

keywords = "SiGe heterojunction bipolar transistor (HBT), pulsed laser, charge collection, single event transient (SET)",

author = "Sun, \{Ya Bin\} and Jun Fu and Jun Xu and Wang, \{Yu Dong\} and Wei Zhou and Wei Zhang and Jie Cui and Li, \{Gao Qing\} and Liu, \{Zhi Hong\} and Yu, \{Yong Tao\} and Ma, \{Ying Qi\} and Feng, \{Guo Qiang\} and Han, \{Jian Wei\}",

year = "2013",

month = may,

doi = "10.1088/1674-1056/22/5/056103",

language = "英语",

volume = "22",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - A single-event transient induced by a pulsed laser in a silicon - Germanium heterojunction bipolar transistor

AU - Sun, Ya Bin

AU - Fu, Jun

AU - Xu, Jun

AU - Wang, Yu Dong

AU - Zhou, Wei

AU - Zhang, Wei

AU - Cui, Jie

AU - Li, Gao Qing

AU - Liu, Zhi Hong

AU - Yu, Yong Tao

AU - Ma, Ying Qi

AU - Feng, Guo Qiang

AU - Han, Jian Wei

PY - 2013/5

Y1 - 2013/5

N2 - A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

AB - A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significantly affect the SET in the SiGe HBT. Furthermore, the underlying physical mechanisms are analyzed and investigated, and a near-ideal exponential model is proposed for the first time to describe the discharge of laser-induced electrons via collector resistance to collector supply when both base-collector and collector-substrate junctions are reverse biased or weakly forward biased. Besides, it is found that an additional multi-path discharge would play an important role in the SET once the base-collector and collector-substrate junctions get strongly forward biased due to a strong transient step charge by the laser pulse.

KW - SiGe heterojunction bipolar transistor (HBT)

KW - pulsed laser, charge collection

KW - single event transient (SET)

UR - https://www.scopus.com/pages/publications/84877999072

U2 - 10.1088/1674-1056/22/5/056103

DO - 10.1088/1674-1056/22/5/056103

M3 - 文章

AN - SCOPUS:84877999072

SN - 1674-1056

VL - 22

JO - Chinese Physics B

JF - Chinese Physics B

IS - 5

M1 - 056103

ER -

A single-event transient induced by a pulsed laser in a silicon - Germanium heterojunction bipolar transistor

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Keywords

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