@inproceedings{66da2f5ff5a6461bbbfce419486f776f,
title = "A simple semi-analytical parameter extraction method for 40nm gatelength MOSFET",
abstract = "A simple and accurate small-signal model for 40 nm gatelength MOSFET device is proposed in this paper. Semi-analytical extraction method is performed by tf-parameter analysis based on the proposed equivalent circuit of MOSFET for high-frequency operation. Simulated and measured results of 40 nm MOSFET with a 5×0.04×4 μm gatewidth (unit gate width × unit gate length × number of gate finger) are compared and good agreement has been obtained up to 40GHz.",
keywords = "40nm, MOSFET, extraction, semi-analytical, small signal",
author = "Panpan Yu and Ying Zhou and Ling Sun and Jianjun Gao",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Advanced Semiconductor Integrated Circuits (ASIC), ASICON 2015 ; Conference date: 03-11-2015 Through 06-11-2015",
year = "2016",
month = jul,
day = "21",
doi = "10.1109/ASICON.2015.7517165",
language = "英语",
series = "Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Junyan Ren and Ting-Ao Tang and Fan Ye and Huihua Yu",
booktitle = "Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015",
address = "美国",
}