A silicon BiCMOS single-chip UHF receiver design

Xu Yongsheng*, Shi Chunqi, Jin Wei, Yu Hui, Tao Yonggang, Hong Liang, Lai Zongsheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

A single-chip UHF receiver integrated with PLL working at ISM band from 290MHz to 470MHz is presented. It operates from a single 5V supply with a nominal current consumption of only 6.5 mA (with all parts of the receiver arc active). The IC requires only a low frequency reference clock (Crystal Oscillator), a varactor diode, and a few of standard passive elements to operate fully, satisfying almost all of the low power radio regulations. The LNA has a 1.56dB noise figure, 15.2dB power gain and 8dBm IIP3. The mixer has a 9.3dB SSB noise figure with 5dBm IIP3. The PLL achieves a phase noise of -99.7dBc/Hz at 100KHz offset with 433MHz carrier frequency. The RF receiver was implemented in a 0.8um, 12GHz fT (NPN) Si BiCMOS production technology.

Original languageEnglish
Title of host publication2005 International Conference on Communications, Circuits and Systems - Proceedings
Pages1295-1299
Number of pages5
StatePublished - 2005
Event2005 International Conference on Communications, Circuits and Systems - Hong Kong, China
Duration: 27 May 200530 May 2005

Publication series

Name2005 International Conference on Communications, Circuits and Systems - Proceedings
Volume2

Conference

Conference2005 International Conference on Communications, Circuits and Systems
Country/TerritoryChina
CityHong Kong
Period27/05/0530/05/05

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