Abstract
A semi-analytical small signal parameter extraction method for high electron-mobility transistor (HEMT) under different bias conditions is presented. Based on test structure to determine the pad capacitance and parasitic inductances, the semi-analysis method is used to extract parasitic resistances and to improve the precision of the parasitic resistance in the small signal model. The agreement between the measured S-parameters and simulated ones is excellent over the frequency range up to 40 GHz under multibias condition.
| Original language | English |
|---|---|
| Pages (from-to) | 72-77 |
| Number of pages | 6 |
| Journal | Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves |
| Volume | 33 |
| Issue number | 1 |
| DOIs | |
| State | Published - Feb 2014 |
Keywords
- High electron-mobility transistor
- Multibias condition
- Parasitic resistances
- Semi-analysis method
- Small signal model