A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application

Y. Tu; Z. Tang; X. G. Zhao; Y. Chen; Z. Q. Zhu; J. H. Chu; J. C. Fang

doi:10.1063/1.4818659

A paramagnetic neutral V_AlO_N center in wurtzite AlN for spin qubit application

Y. Tu
, Z. Tang^*
, X. G. Zhao
, Y. Chen
, Z. Q. Zhu
, J. H. Chu
, J. C. Fang

^*Corresponding author for this work

School of Physics and Electronic Science

East China Normal University
Beihang University

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Spin-polarized electronic structures of V_AlO_N centers consisting of an aluminum vacancy and a substitutional oxygen in AlN with different charge states are studied by first-principles calculations. It is observed that a paramagnetic neutral V_AlO_N center is stable in p-type AlN. The defect center possesses a triplet ground state and a spin-conserved excited state with rather low excitation energy and its spin coherence time is in an order of second at T = 0 estimated by using a mean-field-based scheme. The results indicate that the neutral V _AlO_N center is a promising candidate for spin coherent manipulation and qubit operation.

Original language	English
Article number	072103
Journal	Applied Physics Letters
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.4818659
State	Published - 12 Aug 2013

Access to Document

10.1063/1.4818659

Cite this

@article{ea8281bf2a8445f489438da92d451167,

title = "A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application",

abstract = "Spin-polarized electronic structures of VAlON centers consisting of an aluminum vacancy and a substitutional oxygen in AlN with different charge states are studied by first-principles calculations. It is observed that a paramagnetic neutral VAlON center is stable in p-type AlN. The defect center possesses a triplet ground state and a spin-conserved excited state with rather low excitation energy and its spin coherence time is in an order of second at T = 0 estimated by using a mean-field-based scheme. The results indicate that the neutral V AlON center is a promising candidate for spin coherent manipulation and qubit operation.",

author = "Y. Tu and Z. Tang and Zhao, \{X. G.\} and Y. Chen and Zhu, \{Z. Q.\} and Chu, \{J. H.\} and Fang, \{J. C.\}",

year = "2013",

month = aug,

day = "12",

doi = "10.1063/1.4818659",

language = "英语",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application

AU - Tu, Y.

AU - Tang, Z.

AU - Zhao, X. G.

AU - Chen, Y.

AU - Zhu, Z. Q.

AU - Chu, J. H.

AU - Fang, J. C.

PY - 2013/8/12

Y1 - 2013/8/12

N2 - Spin-polarized electronic structures of VAlON centers consisting of an aluminum vacancy and a substitutional oxygen in AlN with different charge states are studied by first-principles calculations. It is observed that a paramagnetic neutral VAlON center is stable in p-type AlN. The defect center possesses a triplet ground state and a spin-conserved excited state with rather low excitation energy and its spin coherence time is in an order of second at T = 0 estimated by using a mean-field-based scheme. The results indicate that the neutral V AlON center is a promising candidate for spin coherent manipulation and qubit operation.

AB - Spin-polarized electronic structures of VAlON centers consisting of an aluminum vacancy and a substitutional oxygen in AlN with different charge states are studied by first-principles calculations. It is observed that a paramagnetic neutral VAlON center is stable in p-type AlN. The defect center possesses a triplet ground state and a spin-conserved excited state with rather low excitation energy and its spin coherence time is in an order of second at T = 0 estimated by using a mean-field-based scheme. The results indicate that the neutral V AlON center is a promising candidate for spin coherent manipulation and qubit operation.

UR - https://www.scopus.com/pages/publications/84882379548

U2 - 10.1063/1.4818659

DO - 10.1063/1.4818659

M3 - 文章

AN - SCOPUS:84882379548

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072103

ER -

A paramagnetic neutral V_AlO_N center in wurtzite AlN for spin qubit application

Abstract

Access to Document

Other files and links

Fingerprint

Cite this