A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application

Y. Tu; Z. Tang; X. G. Zhao; Y. Chen; Z. Q. Zhu; J. H. Chu; J. C. Fang

doi:10.1063/1.4818659

A paramagnetic neutral V_AlO_N center in wurtzite AlN for spin qubit application

Y. Tu, Z. Tang, X. G. Zhao, Y. Chen, Z. Q. Zhu, J. H. Chu, J. C. Fang

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Spin-polarized electronic structures of V_AlO_N centers consisting of an aluminum vacancy and a substitutional oxygen in AlN with different charge states are studied by first-principles calculations. It is observed that a paramagnetic neutral V_AlO_N center is stable in p-type AlN. The defect center possesses a triplet ground state and a spin-conserved excited state with rather low excitation energy and its spin coherence time is in an order of second at T = 0 estimated by using a mean-field-based scheme. The results indicate that the neutral V _AlO_N center is a promising candidate for spin coherent manipulation and qubit operation.

Original language	English
Article number	072103
Journal	Applied Physics Letters
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.4818659
State	Published - 12 Aug 2013

Access to Document

10.1063/1.4818659

Cite this

@article{ea8281bf2a8445f489438da92d451167,

title = "A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application",

abstract = "Spin-polarized electronic structures of VAlON centers consisting of an aluminum vacancy and a substitutional oxygen in AlN with different charge states are studied by first-principles calculations. It is observed that a paramagnetic neutral VAlON center is stable in p-type AlN. The defect center possesses a triplet ground state and a spin-conserved excited state with rather low excitation energy and its spin coherence time is in an order of second at T = 0 estimated by using a mean-field-based scheme. The results indicate that the neutral V AlON center is a promising candidate for spin coherent manipulation and qubit operation.",

author = "Y. Tu and Z. Tang and Zhao, \{X. G.\} and Y. Chen and Zhu, \{Z. Q.\} and Chu, \{J. H.\} and Fang, \{J. C.\}",

year = "2013",

month = aug,

day = "12",

doi = "10.1063/1.4818659",

language = "英语",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application

AU - Tu, Y.

AU - Tang, Z.

AU - Zhao, X. G.

AU - Chen, Y.

AU - Zhu, Z. Q.

AU - Chu, J. H.

AU - Fang, J. C.

PY - 2013/8/12

Y1 - 2013/8/12

N2 - Spin-polarized electronic structures of VAlON centers consisting of an aluminum vacancy and a substitutional oxygen in AlN with different charge states are studied by first-principles calculations. It is observed that a paramagnetic neutral VAlON center is stable in p-type AlN. The defect center possesses a triplet ground state and a spin-conserved excited state with rather low excitation energy and its spin coherence time is in an order of second at T = 0 estimated by using a mean-field-based scheme. The results indicate that the neutral V AlON center is a promising candidate for spin coherent manipulation and qubit operation.

AB - Spin-polarized electronic structures of VAlON centers consisting of an aluminum vacancy and a substitutional oxygen in AlN with different charge states are studied by first-principles calculations. It is observed that a paramagnetic neutral VAlON center is stable in p-type AlN. The defect center possesses a triplet ground state and a spin-conserved excited state with rather low excitation energy and its spin coherence time is in an order of second at T = 0 estimated by using a mean-field-based scheme. The results indicate that the neutral V AlON center is a promising candidate for spin coherent manipulation and qubit operation.

UR - https://www.scopus.com/pages/publications/84882379548

U2 - 10.1063/1.4818659

DO - 10.1063/1.4818659

M3 - 文章

AN - SCOPUS:84882379548

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072103

ER -

A paramagnetic neutral V_AlO_N center in wurtzite AlN for spin qubit application

Abstract

Access to Document

Other files and links

Fingerprint

Cite this