A novel sputtering oxidation coupling (SOC) method to fabricate VO                         2                          thin film

Xiaofeng Xu; Anyuan Yin; Xiliang Du; Jiqing Wang; Jiading Liu; Xinfeng He; Xingxing Liu; Yilong Huan

doi:10.1016/j.apsusc.2009.11.022

A novel sputtering oxidation coupling (SOC) method to fabricate VO ₂ thin film

Xiaofeng Xu^*
, Anyuan Yin
, Xiliang Du
, Jiqing Wang
, Jiading Liu
, Xinfeng He
, Xingxing Liu
, Yilong Huan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

VO ₂ thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.

Original language	English
Pages (from-to)	2750-2753
Number of pages	4
Journal	Applied Surface Science
Volume	256
Issue number	9
DOIs	https://doi.org/10.1016/j.apsusc.2009.11.022
State	Published - 15 Feb 2010
Externally published	Yes

Keywords

Metal-insulator transition
Sputtering oxidation coupling

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10.1016/j.apsusc.2009.11.022

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title = " A novel sputtering oxidation coupling (SOC) method to fabricate VO 2 thin film ",

abstract = " VO 2 thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.",

keywords = "Metal-insulator transition, Sputtering oxidation coupling",

author = "Xiaofeng Xu and Anyuan Yin and Xiliang Du and Jiqing Wang and Jiading Liu and Xinfeng He and Xingxing Liu and Yilong Huan",

year = "2010",

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doi = "10.1016/j.apsusc.2009.11.022",

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pages = "2750--2753",

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T1 - A novel sputtering oxidation coupling (SOC) method to fabricate VO 2 thin film

AU - Xu, Xiaofeng

AU - Yin, Anyuan

AU - Du, Xiliang

AU - Wang, Jiqing

AU - Liu, Jiading

AU - He, Xinfeng

AU - Liu, Xingxing

AU - Huan, Yilong

PY - 2010/2/15

Y1 - 2010/2/15

N2 - VO 2 thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.

AB - VO 2 thin film synthesized by a novel sputtering oxidation coupling (SOC) method has been successfully fabricated. The experimental results show that the optimum oxidation time is 285 s and the thin film exhibits a good metal-insulator transition (MIT) approximately at 340 K. The corresponding structures and surface compositions of the films have been characterized by X-ray diffractometer and X-ray photoelectron spectroscopy separately.

KW - Metal-insulator transition

KW - Sputtering oxidation coupling

UR - https://www.scopus.com/pages/publications/75249098641

U2 - 10.1016/j.apsusc.2009.11.022

DO - 10.1016/j.apsusc.2009.11.022

M3 - 文章

AN - SCOPUS:75249098641

SN - 0169-4332

VL - 256

SP - 2750

EP - 2753

JO - Applied Surface Science

JF - Applied Surface Science

IS - 9

ER -

A novel sputtering oxidation coupling (SOC) method to fabricate VO ₂ thin film

Abstract

Keywords

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