A novel high-isolation RF-SOI switch for 2.4 GHz multi-standard applications

Taking advantage of 1 KXΩcm high-resistivity substrate and special device structure, a novel stack-by-two Single-pole-double-throw (SPDT) switch is fabricated in 0.18 μm partially depleted silicon-on-insulator technology for power handling capability and linearity improvement, targeting 2.4 GHz multi-standard transceiver application. The measured insertion loss is -1.1 dB at 2.4 GHz. With stacked switching device, the circuit exhibits a high measured input input-referred 1 dB power compression point (IP1 dB) of 21.5 dBm, which has more than 7 dB enhancement compared to previous work. The measured isolation is 43 dB. The switch has a overall occupied die area of 1200 × 560 μm².