Abstract
A novel dual-band low noise amplifier applied in Wireless LAN is designed and fabricated in 0.18 μm CMOS process. In this dual-band LNA, by switching the input inductors and load inductors, the gain and impedance matching are achieved at the 2.4 GHz and the 5.2 GHz operation frequency bands, respectively. With a 1.8 V power supply, the LNA has a gain of 11.5 dB at 2.4 GHz and 10.2 dB at 5.2 GHz, and the noise figure of 3 dB at 2.4 GHz and 5.1 dB at 5.2 GHz, respectively. The total die area is 0.9 mm×0.65 mm.
| Original language | English |
|---|---|
| Pages (from-to) | 373-377 |
| Number of pages | 5 |
| Journal | Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics |
| Volume | 29 |
| Issue number | 3 |
| State | Published - Sep 2009 |
Keywords
- Dual-band
- LNA
- WLAN