A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET

Panpan Yu; Ying Zhou; Ling Sun; Jianjun Gao

doi:10.1002/jnm.2163

A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET

Panpan Yu
, Ying Zhou
, Ling Sun
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A novel extrinsic resistance extraction method of MOSFET at V_gs = V_ds = 0 V from S-parameter measurements is presented in this paper. Simulated and measured results of 90-nm gatelength MOSFET device with a 8 × 0.6 × 12 µm gatewidth (number of gate finger × unit gate width × cells) are compared, and good agreement has been obtained up to 50 GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper.

Original language	English
Pages (from-to)	1044-1054
Number of pages	11
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	29
Issue number	6
DOIs	https://doi.org/10.1002/jnm.2163
State	Published - 1 Nov 2016

Keywords

MOSFET
extraction
extrinsic resistance
radio frequency
small signal

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10.1002/jnm.2163

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title = "A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET",

abstract = "A novel extrinsic resistance extraction method of MOSFET at Vgs = Vds = 0 V from S-parameter measurements is presented in this paper. Simulated and measured results of 90-nm gatelength MOSFET device with a 8 × 0.6 × 12 µm gatewidth (number of gate finger × unit gate width × cells) are compared, and good agreement has been obtained up to 50 GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper.",

keywords = "MOSFET, extraction, extrinsic resistance, radio frequency, small signal",

author = "Panpan Yu and Ying Zhou and Ling Sun and Jianjun Gao",

note = "Publisher Copyright: Copyright {\textcopyright} 2016 John Wiley \& Sons, Ltd.",

year = "2016",

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T1 - A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET

AU - Yu, Panpan

AU - Zhou, Ying

AU - Sun, Ling

AU - Gao, Jianjun

PY - 2016/11/1

Y1 - 2016/11/1

N2 - A novel extrinsic resistance extraction method of MOSFET at Vgs = Vds = 0 V from S-parameter measurements is presented in this paper. Simulated and measured results of 90-nm gatelength MOSFET device with a 8 × 0.6 × 12 µm gatewidth (number of gate finger × unit gate width × cells) are compared, and good agreement has been obtained up to 50 GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper.

AB - A novel extrinsic resistance extraction method of MOSFET at Vgs = Vds = 0 V from S-parameter measurements is presented in this paper. Simulated and measured results of 90-nm gatelength MOSFET device with a 8 × 0.6 × 12 µm gatewidth (number of gate finger × unit gate width × cells) are compared, and good agreement has been obtained up to 50 GHz. Furthermore, comparisons between the proposed approach and other three methods published are also made in this paper.

KW - MOSFET

KW - extraction

KW - extrinsic resistance

KW - radio frequency

KW - small signal

UR - https://www.scopus.com/pages/publications/84963699359

U2 - 10.1002/jnm.2163

DO - 10.1002/jnm.2163

M3 - 文章

AN - SCOPUS:84963699359

SN - 0894-3370

VL - 29

SP - 1044

EP - 1054

JO - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

JF - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

IS - 6

ER -

A novel approach to extracting extrinsic resistances for equivalent circuit model of nanoscale MOSFET

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Keywords

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