A new method to determine parasitic capacitances for HEMTs

Li Shen; Bo Chen; Caiyun Fan; Jianjun Gao

doi:10.1002/mop.27990

A new method to determine parasitic capacitances for HEMTs

Li Shen, Bo Chen, Caiyun Fan, Jianjun Gao

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A new direct extraction method for the determination of the parasitic capacitances of HEMTs is presented in this article. This method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinch-off cold FETs. The main advantage of this approach is that parasitic capacitance C_pg, C_pd, and C_pdg can be extracted under different pinch-off conditions. Good agreement is obtained between modeled and measured results for 2 × 20 μm gate width HEMT (number of gate fingers × unit gate width).

Original language	English
Pages (from-to)	3005-3007
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	55
Issue number	12
DOIs	https://doi.org/10.1002/mop.27990
State	Published - Dec 2013

Keywords

Cold FET
HEMT
pinch-off

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10.1002/mop.27990

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title = "A new method to determine parasitic capacitances for HEMTs",

abstract = "A new direct extraction method for the determination of the parasitic capacitances of HEMTs is presented in this article. This method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinch-off cold FETs. The main advantage of this approach is that parasitic capacitance Cpg, Cpd, and Cpdg can be extracted under different pinch-off conditions. Good agreement is obtained between modeled and measured results for 2 × 20 μm gate width HEMT (number of gate fingers × unit gate width).",

keywords = "Cold FET, HEMT, pinch-off",

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AU - Shen, Li

AU - Chen, Bo

AU - Fan, Caiyun

AU - Gao, Jianjun

PY - 2013/12

Y1 - 2013/12

N2 - A new direct extraction method for the determination of the parasitic capacitances of HEMTs is presented in this article. This method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinch-off cold FETs. The main advantage of this approach is that parasitic capacitance Cpg, Cpd, and Cpdg can be extracted under different pinch-off conditions. Good agreement is obtained between modeled and measured results for 2 × 20 μm gate width HEMT (number of gate fingers × unit gate width).

AB - A new direct extraction method for the determination of the parasitic capacitances of HEMTs is presented in this article. This method is based on a physically meaningful depletion-layer model and the theoretical analysis of the two-port network for the pinch-off cold FETs. The main advantage of this approach is that parasitic capacitance Cpg, Cpd, and Cpdg can be extracted under different pinch-off conditions. Good agreement is obtained between modeled and measured results for 2 × 20 μm gate width HEMT (number of gate fingers × unit gate width).

KW - Cold FET

KW - HEMT

KW - pinch-off

UR - https://www.scopus.com/pages/publications/84885007658

U2 - 10.1002/mop.27990

DO - 10.1002/mop.27990

M3 - 文章

AN - SCOPUS:84885007658

SN - 0895-2477

VL - 55

SP - 3005

EP - 3007

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 12

ER -

A new method to determine parasitic capacitances for HEMTs

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Keywords

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