A new method for pHEMT noise-parameter determination based on 50-Ω noise measurement system

Jianjun Gao; Choi Look Law; Hong Wang; Sheel Aditya; Georg Boeck

doi:10.1109/TMTT.2003.817680

A new method for pHEMT noise-parameter determination based on 50-Ω noise measurement system

Jianjun Gao^*
, Choi Look Law
, Hong Wang
, Sheel Aditya
, Georg Boeck

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMT) based on 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 26 GHz is presented and a comparison with a tuner-based method is given. The scaling rules for noise parameters have also been determined. Good agreement is obtained between simulated and measured results for 2 × 20 μm, 2 × 40 μm, and 2 × 60 μm gatewidth (number of gate fingers × unit gatewidth) 0.25-μm double-heterojunction δ-doped pHEMTs.

Original language	English
Pages (from-to)	2079-2089
Number of pages	11
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	51
Issue number	10
DOIs	https://doi.org/10.1109/TMTT.2003.817680
State	Published - Oct 2003
Externally published	Yes

Keywords

Correlation noise matrix
Noise measurement
Noise parameter

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10.1109/TMTT.2003.817680

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title = "A new method for pHEMT noise-parameter determination based on 50-Ω noise measurement system",

abstract = "A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMT) based on 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 26 GHz is presented and a comparison with a tuner-based method is given. The scaling rules for noise parameters have also been determined. Good agreement is obtained between simulated and measured results for 2 × 20 μm, 2 × 40 μm, and 2 × 60 μm gatewidth (number of gate fingers × unit gatewidth) 0.25-μm double-heterojunction δ-doped pHEMTs.",

keywords = "Correlation noise matrix, Noise measurement, Noise parameter",

author = "Jianjun Gao and Law, \{Choi Look\} and Hong Wang and Sheel Aditya and Georg Boeck",

year = "2003",

month = oct,

doi = "10.1109/TMTT.2003.817680",

language = "英语",

volume = "51",

pages = "2079--2089",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

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TY - JOUR

T1 - A new method for pHEMT noise-parameter determination based on 50-Ω noise measurement system

AU - Gao, Jianjun

AU - Law, Choi Look

AU - Wang, Hong

AU - Aditya, Sheel

AU - Boeck, Georg

PY - 2003/10

Y1 - 2003/10

N2 - A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMT) based on 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 26 GHz is presented and a comparison with a tuner-based method is given. The scaling rules for noise parameters have also been determined. Good agreement is obtained between simulated and measured results for 2 × 20 μm, 2 × 40 μm, and 2 × 60 μm gatewidth (number of gate fingers × unit gatewidth) 0.25-μm double-heterojunction δ-doped pHEMTs.

AB - A new method for determining the four noise parameters of pseudomorphic high electron-mobility transistors (pHEMT) based on 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 26 GHz is presented and a comparison with a tuner-based method is given. The scaling rules for noise parameters have also been determined. Good agreement is obtained between simulated and measured results for 2 × 20 μm, 2 × 40 μm, and 2 × 60 μm gatewidth (number of gate fingers × unit gatewidth) 0.25-μm double-heterojunction δ-doped pHEMTs.

KW - Correlation noise matrix

KW - Noise measurement

KW - Noise parameter

UR - https://www.scopus.com/pages/publications/0141883974

U2 - 10.1109/TMTT.2003.817680

DO - 10.1109/TMTT.2003.817680

M3 - 文章

AN - SCOPUS:0141883974

SN - 0018-9480

VL - 51

SP - 2079

EP - 2089

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 10

ER -

A new method for pHEMT noise-parameter determination based on 50-Ω noise measurement system

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Keywords

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