A new method for determination of parasitic capacitances for PHEMTs

Jianjun Gao; Xiuping Li; Hong Wang; Georg Boeck

doi:10.1088/0268-1242/20/6/018

A new method for determination of parasitic capacitances for PHEMTs

Jianjun Gao^*
, Xiuping Li
, Hong Wang
, Georg Boeck

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

A new direct extraction method for the determination of the parasitic capacitances of PHEMTs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including C_pg, C_pd and C_pgd can be extracted simultaneously by using PHEMTs of different sizes but with the same pad structure. Good agreement is obtained between modelled and measured results for 2 × 20 νm, 2 × 40 νm, 2 × 60 νm and 2 × 100 νm gate width (number of gate fingers × unit gate width) double heterojunction δ-doped PHEMTs.

Original language	English
Pages (from-to)	586-591
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	20
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/20/6/018
State	Published - 1 Jun 2005
Externally published	Yes

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title = "A new method for determination of parasitic capacitances for PHEMTs",

abstract = "A new direct extraction method for the determination of the parasitic capacitances of PHEMTs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including Cpg, Cpd and Cpgd can be extracted simultaneously by using PHEMTs of different sizes but with the same pad structure. Good agreement is obtained between modelled and measured results for 2 × 20 νm, 2 × 40 νm, 2 × 60 νm and 2 × 100 νm gate width (number of gate fingers × unit gate width) double heterojunction δ-doped PHEMTs.",

author = "Jianjun Gao and Xiuping Li and Hong Wang and Georg Boeck",

year = "2005",

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doi = "10.1088/0268-1242/20/6/018",

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T1 - A new method for determination of parasitic capacitances for PHEMTs

AU - Gao, Jianjun

AU - Li, Xiuping

AU - Wang, Hong

AU - Boeck, Georg

PY - 2005/6/1

Y1 - 2005/6/1

N2 - A new direct extraction method for the determination of the parasitic capacitances of PHEMTs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including Cpg, Cpd and Cpgd can be extracted simultaneously by using PHEMTs of different sizes but with the same pad structure. Good agreement is obtained between modelled and measured results for 2 × 20 νm, 2 × 40 νm, 2 × 60 νm and 2 × 100 νm gate width (number of gate fingers × unit gate width) double heterojunction δ-doped PHEMTs.

AB - A new direct extraction method for the determination of the parasitic capacitances of PHEMTs is presented in this paper. This method is based on a general scalable small signal equivalent circuit model under pinch-off bias condition. The main advantage of this approach is that all parasitic capacitances including Cpg, Cpd and Cpgd can be extracted simultaneously by using PHEMTs of different sizes but with the same pad structure. Good agreement is obtained between modelled and measured results for 2 × 20 νm, 2 × 40 νm, 2 × 60 νm and 2 × 100 νm gate width (number of gate fingers × unit gate width) double heterojunction δ-doped PHEMTs.

UR - https://www.scopus.com/pages/publications/18744401894

U2 - 10.1088/0268-1242/20/6/018

DO - 10.1088/0268-1242/20/6/018

M3 - 文章

AN - SCOPUS:18744401894

SN - 0268-1242

VL - 20

SP - 586

EP - 591

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

A new method for determination of parasitic capacitances for PHEMTs

Abstract

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