A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model

Ao Zhang; Jianjun Gao

doi:10.1016/j.sse.2018.10.005

A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model

Ao Zhang, Jianjun Gao

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A new direct extraction method to determine the parasitic capacitances for HBTs is presented in this paper. The main advantage is that base parasitic capacitance Cpb can be extracted by using three different size HBTs with the same pad profile. This method is based on an improved small-signal model, which takes into account the distribution effects of the base and collector feedlines. Good agreement is obtained between the measured and modeled results for the 1 × 3 × 12 μm², 2 × 2 × 20 μm² and 1 × 3 × 40 μm² (number of emitter fingers × emitter width × emitter length) GaAs HBTs up to 40 GHz.

Original language	English
Pages (from-to)	45-50
Number of pages	6
Journal	Solid-State Electronics
Volume	150
DOIs	https://doi.org/10.1016/j.sse.2018.10.005
State	Published - Dec 2018

Keywords

Equivalent circuits
HBT
Parameter extraction
Scalable model
Small signal model

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10.1016/j.sse.2018.10.005

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@article{4fb78797d650430aba5c9487e13eb482,

title = "A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model",

abstract = "A new direct extraction method to determine the parasitic capacitances for HBTs is presented in this paper. The main advantage is that base parasitic capacitance Cpb can be extracted by using three different size HBTs with the same pad profile. This method is based on an improved small-signal model, which takes into account the distribution effects of the base and collector feedlines. Good agreement is obtained between the measured and modeled results for the 1 × 3 × 12 μm2, 2 × 2 × 20 μm2 and 1 × 3 × 40 μm2 (number of emitter fingers × emitter width × emitter length) GaAs HBTs up to 40 GHz.",

keywords = "Equivalent circuits, HBT, Parameter extraction, Scalable model, Small signal model",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = dec,

doi = "10.1016/j.sse.2018.10.005",

language = "英语",

volume = "150",

pages = "45--50",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2018/12

Y1 - 2018/12

N2 - A new direct extraction method to determine the parasitic capacitances for HBTs is presented in this paper. The main advantage is that base parasitic capacitance Cpb can be extracted by using three different size HBTs with the same pad profile. This method is based on an improved small-signal model, which takes into account the distribution effects of the base and collector feedlines. Good agreement is obtained between the measured and modeled results for the 1 × 3 × 12 μm2, 2 × 2 × 20 μm2 and 1 × 3 × 40 μm2 (number of emitter fingers × emitter width × emitter length) GaAs HBTs up to 40 GHz.

AB - A new direct extraction method to determine the parasitic capacitances for HBTs is presented in this paper. The main advantage is that base parasitic capacitance Cpb can be extracted by using three different size HBTs with the same pad profile. This method is based on an improved small-signal model, which takes into account the distribution effects of the base and collector feedlines. Good agreement is obtained between the measured and modeled results for the 1 × 3 × 12 μm2, 2 × 2 × 20 μm2 and 1 × 3 × 40 μm2 (number of emitter fingers × emitter width × emitter length) GaAs HBTs up to 40 GHz.

KW - Equivalent circuits

KW - HBT

KW - Parameter extraction

KW - Scalable model

KW - Small signal model

UR - https://www.scopus.com/pages/publications/85054859941

U2 - 10.1016/j.sse.2018.10.005

DO - 10.1016/j.sse.2018.10.005

M3 - 文章

AN - SCOPUS:85054859941

SN - 0038-1101

VL - 150

SP - 45

EP - 50

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model

Abstract

Keywords

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