TY - GEN
T1 - A low-power SIPM readout front-end with fast pulse generation and successive-approximation register ADC in 0.18 µm CMOS
AU - Tang, Yuxuan
AU - Fan, Qingjun
AU - Feng, Yulang
AU - Deng, Hao
AU - Zhang, Runxi
AU - Chen, Jinghong
N1 - Publisher Copyright:
© 2019 IEEE
PY - 2019
Y1 - 2019
N2 - This paper presents a low-power silicon photomultiplier (SiPM) readout front-end with on-chip fast pulse generation and successive-approximation-register (SAR) ADC. The front-end mainly consists of a current buffer with an on-chip C-R high pass filter (HPF), a charge integrator, a current discriminator, and a 10-bit low-power SAR ADC. The current-mode buffer offers a low input impedance thus achieving a high input bandwidth. The on-chip HPF shortens the width of the SiPM's long-tailed single photo-electron (SPE) response to generate the fast pulse signal, which allows the current discriminator to suppress the uncertainty of timing measurement and helps to achieve a better coincidence resolving time (CRT). Compared with off-chip fast pulse generators, no additional I/O pin is required facilitating compact multi-channel SiPM readouts. By reusing the charge integration capacitor as the sampling capacitor of the SAR ADC, the power-hungry charge sensitive amplifier (CSA) is eliminated. The front-end is designed in a 0.18 µm 1P6M standard CMOS technology, and has a low power consumption of 4 mW. The on-chip HPF reshapes the long-tailed SPE pulse width from 50 ns to 3 ns. At 1 MS/s, the SAR ADC consumes 132 μW from a 1.8 V supply, and achieves a SNDR of 58.11 dB and a SFDR of 72.47 dB, respectively.
AB - This paper presents a low-power silicon photomultiplier (SiPM) readout front-end with on-chip fast pulse generation and successive-approximation-register (SAR) ADC. The front-end mainly consists of a current buffer with an on-chip C-R high pass filter (HPF), a charge integrator, a current discriminator, and a 10-bit low-power SAR ADC. The current-mode buffer offers a low input impedance thus achieving a high input bandwidth. The on-chip HPF shortens the width of the SiPM's long-tailed single photo-electron (SPE) response to generate the fast pulse signal, which allows the current discriminator to suppress the uncertainty of timing measurement and helps to achieve a better coincidence resolving time (CRT). Compared with off-chip fast pulse generators, no additional I/O pin is required facilitating compact multi-channel SiPM readouts. By reusing the charge integration capacitor as the sampling capacitor of the SAR ADC, the power-hungry charge sensitive amplifier (CSA) is eliminated. The front-end is designed in a 0.18 µm 1P6M standard CMOS technology, and has a low power consumption of 4 mW. The on-chip HPF reshapes the long-tailed SPE pulse width from 50 ns to 3 ns. At 1 MS/s, the SAR ADC consumes 132 μW from a 1.8 V supply, and achieves a SNDR of 58.11 dB and a SFDR of 72.47 dB, respectively.
KW - Coincidence resolving time
KW - Low power consumption
KW - Silicon photomultiplier
KW - Single-ended SAR ADC
UR - https://www.scopus.com/pages/publications/85066808853
U2 - 10.1109/ISCAS.2019.8702235
DO - 10.1109/ISCAS.2019.8702235
M3 - 会议稿件
AN - SCOPUS:85066808853
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
BT - 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE International Symposium on Circuits and Systems, ISCAS 2019
Y2 - 26 May 2019 through 29 May 2019
ER -