A K-band down-conversion mixer design with integrated baluns in 65nm CMOS

Peng Wei; Shengxi Diao; Dong Huang; Zhongqian Fu; Fujiang Lin

doi:10.1109/GSMM.2012.6314055

A K-band down-conversion mixer design with integrated baluns in 65nm CMOS

Peng Wei^*
, Shengxi Diao
, Dong Huang
, Zhongqian Fu
, Fujiang Lin

^*Corresponding author for this work

University of Science and Technology of China

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

This paper presents a K-Band Down-Conversion mixer which is implemented in 65nm CMOS process. The conversion gain, noise performance and linearity are improved by using current bleeding technique and inserting an additional resonating inductor at common sources. The minimum NF is 12.7dB and the maximum conversion gain is 4.1dB with IIP2 of 80dBm. Two identical passive baluns are integrated for RF and LO input signals, which demonstrate a performance of 9dB insertion loss.

Original language	English
Title of host publication	Proceedings of 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012
Pages	282-285
Number of pages	4
DOIs	https://doi.org/10.1109/GSMM.2012.6314055
State	Published - 2012
Externally published	Yes
Event	2012 5th Global Symposium on Millimeter-Waves, GSMM 2012 - Harbin, China Duration: 27 May 2012 → 30 May 2012

Publication series

Name	Proceedings of 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012

Conference

Conference	2012 5th Global Symposium on Millimeter-Waves, GSMM 2012
Country/Territory	China
City	Harbin
Period	27/05/12 → 30/05/12

Keywords

CMOS mixer
baluns
current bleeding
parasitic capacitors
resonating inductor

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10.1109/GSMM.2012.6314055

Cite this

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title = "A K-band down-conversion mixer design with integrated baluns in 65nm CMOS",

abstract = "This paper presents a K-Band Down-Conversion mixer which is implemented in 65nm CMOS process. The conversion gain, noise performance and linearity are improved by using current bleeding technique and inserting an additional resonating inductor at common sources. The minimum NF is 12.7dB and the maximum conversion gain is 4.1dB with IIP2 of 80dBm. Two identical passive baluns are integrated for RF and LO input signals, which demonstrate a performance of 9dB insertion loss.",

keywords = "CMOS mixer, baluns, current bleeding, parasitic capacitors, resonating inductor",

author = "Peng Wei and Shengxi Diao and Dong Huang and Zhongqian Fu and Fujiang Lin",

year = "2012",

doi = "10.1109/GSMM.2012.6314055",

language = "英语",

isbn = "9781467313032",

series = "Proceedings of 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012",

pages = "282--285",

booktitle = "Proceedings of 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012",

note = "2012 5th Global Symposium on Millimeter-Waves, GSMM 2012 ; Conference date: 27-05-2012 Through 30-05-2012",

}

Wei, P, Diao, S, Huang, D, Fu, Z & Lin, F 2012, A K-band down-conversion mixer design with integrated baluns in 65nm CMOS. in Proceedings of 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012., 6314055, Proceedings of 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012, pp. 282-285, 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012, Harbin, China, 27/05/12. https://doi.org/10.1109/GSMM.2012.6314055

A K-band down-conversion mixer design with integrated baluns in 65nm CMOS. / Wei, Peng; Diao, Shengxi; Huang, Dong et al.
Proceedings of 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012. 2012. p. 282-285 6314055 (Proceedings of 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A K-band down-conversion mixer design with integrated baluns in 65nm CMOS

AU - Wei, Peng

AU - Diao, Shengxi

AU - Huang, Dong

AU - Fu, Zhongqian

AU - Lin, Fujiang

PY - 2012

Y1 - 2012

N2 - This paper presents a K-Band Down-Conversion mixer which is implemented in 65nm CMOS process. The conversion gain, noise performance and linearity are improved by using current bleeding technique and inserting an additional resonating inductor at common sources. The minimum NF is 12.7dB and the maximum conversion gain is 4.1dB with IIP2 of 80dBm. Two identical passive baluns are integrated for RF and LO input signals, which demonstrate a performance of 9dB insertion loss.

AB - This paper presents a K-Band Down-Conversion mixer which is implemented in 65nm CMOS process. The conversion gain, noise performance and linearity are improved by using current bleeding technique and inserting an additional resonating inductor at common sources. The minimum NF is 12.7dB and the maximum conversion gain is 4.1dB with IIP2 of 80dBm. Two identical passive baluns are integrated for RF and LO input signals, which demonstrate a performance of 9dB insertion loss.

KW - CMOS mixer

KW - baluns

KW - current bleeding

KW - parasitic capacitors

KW - resonating inductor

UR - https://www.scopus.com/pages/publications/84868656855

U2 - 10.1109/GSMM.2012.6314055

DO - 10.1109/GSMM.2012.6314055

M3 - 会议稿件

AN - SCOPUS:84868656855

SN - 9781467313032

T3 - Proceedings of 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012

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BT - Proceedings of 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012

T2 - 2012 5th Global Symposium on Millimeter-Waves, GSMM 2012

Y2 - 27 May 2012 through 30 May 2012

ER -

A K-band down-conversion mixer design with integrated baluns in 65nm CMOS

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Keywords

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