A high gain V-band power amplifier for 5G applications

Xiaojian Zhu; Runxi Zhang; Chunqi Shi

doi:10.1587/ELEX.18.20210049

A high gain V-band power amplifier for 5G applications

Xiaojian Zhu, Runxi Zhang, Chunqi Shi

School of Communication and Electronic Engineering

East China Normal University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This paper presents a high gain millimeter-wave (mmW) power amplifier (PA) fabricated in a 55 nm CMOS technology for V-band 5G wireless communication applications. An accurate magnetically-coupled-resonator (MCR) analysis and evaluation method is proposed to capture the MCR characteristics and optimize PA gain and bandwidth. A low-loss-matching-resonator (LLMR) technology is developed to enhance power gain and efficiency. The PA achieves a peak gain of 21.1 dB at 67 GHz with a 3 dB bandwidth (BW-3dB) of 10 GHz. At 67 GHz, the measured saturated output power (Psat ), the output 1 dB compression point (OP1dB) and the peak PAE are 13.9 dBm, 9.7 dBm and 11.8%, respectively.

Original language	English
Journal	IEICE Electronics Express
Volume	18
Issue number	6
DOIs	https://doi.org/10.1587/ELEX.18.20210049
State	Published - 1 Mar 2021

Keywords

High gain
Low-loss-matching-resonator (LLMR)
Magnetically-coupled-resonator (MCR)
Millimeter-wave (mmW)
Power amplifier (PA)
V-band

Access to Document

10.1587/ELEX.18.20210049

Cite this

@article{e6b83bdd4b4a4b8480f1fbd6dcd5b5fe,

title = "A high gain V-band power amplifier for 5G applications",

abstract = "This paper presents a high gain millimeter-wave (mmW) power amplifier (PA) fabricated in a 55 nm CMOS technology for V-band 5G wireless communication applications. An accurate magnetically-coupled-resonator (MCR) analysis and evaluation method is proposed to capture the MCR characteristics and optimize PA gain and bandwidth. A low-loss-matching-resonator (LLMR) technology is developed to enhance power gain and efficiency. The PA achieves a peak gain of 21.1 dB at 67 GHz with a 3 dB bandwidth (BW-3dB) of 10 GHz. At 67 GHz, the measured saturated output power (Psat ), the output 1 dB compression point (OP1dB) and the peak PAE are 13.9 dBm, 9.7 dBm and 11.8\%, respectively.",

keywords = "High gain, Low-loss-matching-resonator (LLMR), Magnetically-coupled-resonator (MCR), Millimeter-wave (mmW), Power amplifier (PA), V-band",

author = "Xiaojian Zhu and Runxi Zhang and Chunqi Shi",

note = "Publisher Copyright: Copyright {\textcopyright} 2021 The Institute of Electronics, Information and Communication Engineers.",

year = "2021",

month = mar,

day = "1",

doi = "10.1587/ELEX.18.20210049",

language = "英语",

volume = "18",

journal = "IEICE Electronics Express",

issn = "1349-2543",

publisher = "Institute of Electronics Information Communication Engineers",

number = "6",

}

TY - JOUR

T1 - A high gain V-band power amplifier for 5G applications

AU - Zhu, Xiaojian

AU - Zhang, Runxi

AU - Shi, Chunqi

PY - 2021/3/1

Y1 - 2021/3/1

N2 - This paper presents a high gain millimeter-wave (mmW) power amplifier (PA) fabricated in a 55 nm CMOS technology for V-band 5G wireless communication applications. An accurate magnetically-coupled-resonator (MCR) analysis and evaluation method is proposed to capture the MCR characteristics and optimize PA gain and bandwidth. A low-loss-matching-resonator (LLMR) technology is developed to enhance power gain and efficiency. The PA achieves a peak gain of 21.1 dB at 67 GHz with a 3 dB bandwidth (BW-3dB) of 10 GHz. At 67 GHz, the measured saturated output power (Psat ), the output 1 dB compression point (OP1dB) and the peak PAE are 13.9 dBm, 9.7 dBm and 11.8%, respectively.

AB - This paper presents a high gain millimeter-wave (mmW) power amplifier (PA) fabricated in a 55 nm CMOS technology for V-band 5G wireless communication applications. An accurate magnetically-coupled-resonator (MCR) analysis and evaluation method is proposed to capture the MCR characteristics and optimize PA gain and bandwidth. A low-loss-matching-resonator (LLMR) technology is developed to enhance power gain and efficiency. The PA achieves a peak gain of 21.1 dB at 67 GHz with a 3 dB bandwidth (BW-3dB) of 10 GHz. At 67 GHz, the measured saturated output power (Psat ), the output 1 dB compression point (OP1dB) and the peak PAE are 13.9 dBm, 9.7 dBm and 11.8%, respectively.

KW - High gain

KW - Low-loss-matching-resonator (LLMR)

KW - Magnetically-coupled-resonator (MCR)

KW - Millimeter-wave (mmW)

KW - Power amplifier (PA)

KW - V-band

UR - https://www.scopus.com/pages/publications/85104525429

U2 - 10.1587/ELEX.18.20210049

DO - 10.1587/ELEX.18.20210049

M3 - 文章

AN - SCOPUS:85104525429

SN - 1349-2543

VL - 18

JO - IEICE Electronics Express

JF - IEICE Electronics Express

IS - 6

ER -

A high gain V-band power amplifier for 5G applications

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this