Abstract
This paper presents a fully symmetrical capacitive accelerometer. The sensor is a sandwich structure which is fabricated by silicon four-layer bonding and packaged at wafer-level in a vacuum. The precisely controllable original capacitor gap and the bumpers of the sensor are formed by multi-oxidation. The fabricated accelerometer has the sensitivity of 0.59 V/g, the resonance frequency of 657 Hz and the quality factor of 198.
| Original language | English |
|---|---|
| Pages (from-to) | 143-146 |
| Number of pages | 4 |
| Journal | Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics |
| Volume | 29 |
| Issue number | 1 |
| State | Published - Mar 2009 |
| Externally published | Yes |
Keywords
- Capacitive accelerometer
- Capacitor gap control
- Silicon-silicon bonding
- Wafer-level vacuum package