@inproceedings{29b0b1f94aa24ef68dd18d9a4ff5307f,
title = "A fully-integrated Ka-band CMOS power amplifier with Psat of 20 dBm and PAE of 19\%",
abstract = "This paper presents a 27.5-28.5 GHz Ka-band power amplifier fabricated with 0.13 pm CMOS process. A small inter-stage inductor between the cascode common-source and common-gate is designed to improve PA's output power and PAE. A vertical coupling input and output balun with low insertion loss are designed to simultaneously perform impedance transformation and differential to single-ended conversion. The power amplifier achieves a saturated output power (Psat) of 20 dBm and a maximum power gain (G) of 22.6 dB, the peak value of the power added efficiency (PAE) is 19 \%.",
keywords = "CMOS, Ka-band, balun, power amplifier",
author = "Yong Huang and Runxi Zhang and Chunqi Shi",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 16th IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016 ; Conference date: 16-10-2016 Through 19-10-2016",
year = "2016",
month = dec,
day = "16",
doi = "10.1109/ICUWB.2016.7790504",
language = "英语",
series = "2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE International Conference on Ubiquitous Wireless Broadband, ICUWB 2016",
address = "美国",
}