A fully integrated 0.35μm SiGe power amplifier design

Qiong Yan; Lin Hua; Chun Qi Shi; Run Xi Zhang; Zong Sheng Lai

doi:10.1109/ICSICT.2012.6467612

A fully integrated 0.35μm SiGe power amplifier design

Qiong Yan^*
, Lin Hua
, Chun Qi Shi
, Run Xi Zhang
, Zong Sheng Lai

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A fully integrated high-linearity power amplifier targeting 5.5GHz is implemented in 0.35μm SiGe BiCMOS technology. The presented power amplifier schematic has a two-stage single-ended common-emitter structure with 3.3V voltage supply. The measured maximum output power can reach 16.52dBm, and the PAE is 17.45% at P_1dB.

Original language	English
Title of host publication	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs	https://doi.org/10.1109/ICSICT.2012.6467612
State	Published - 2012
Event	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China Duration: 29 Oct 2012 → 1 Nov 2012

Publication series

Name	ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
Country/Territory	China
City	Xi'an
Period	29/10/12 → 1/11/12

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10.1109/ICSICT.2012.6467612

Cite this

Yan, Q., Hua, L., Shi, C. Q., Zhang, R. X., & Lai, Z. S. (2012). A fully integrated 0.35μm SiGe power amplifier design. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings Article 6467612 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6467612

@inproceedings{8e9fe65a3bc84839896b44a84b33ff60,

title = "A fully integrated 0.35μm SiGe power amplifier design",

abstract = "A fully integrated high-linearity power amplifier targeting 5.5GHz is implemented in 0.35μm SiGe BiCMOS technology. The presented power amplifier schematic has a two-stage single-ended common-emitter structure with 3.3V voltage supply. The measured maximum output power can reach 16.52dBm, and the PAE is 17.45\% at P1dB.",

author = "Qiong Yan and Lin Hua and Shi, \{Chun Qi\} and Zhang, \{Run Xi\} and Lai, \{Zong Sheng\}",

year = "2012",

doi = "10.1109/ICSICT.2012.6467612",

language = "英语",

isbn = "9781467324724",

series = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

booktitle = "ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 ; Conference date: 29-10-2012 Through 01-11-2012",

}

Yan, Q, Hua, L, Shi, CQ , Zhang, RX & Lai, ZS 2012, A fully integrated 0.35μm SiGe power amplifier design. in ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 6467612, ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012, Xi'an, China, 29/10/12. https://doi.org/10.1109/ICSICT.2012.6467612

A fully integrated 0.35μm SiGe power amplifier design. / Yan, Qiong; Hua, Lin; Shi, Chun Qi et al.
ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467612 (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A fully integrated 0.35μm SiGe power amplifier design

AU - Yan, Qiong

AU - Hua, Lin

AU - Shi, Chun Qi

AU - Zhang, Run Xi

AU - Lai, Zong Sheng

PY - 2012

Y1 - 2012

N2 - A fully integrated high-linearity power amplifier targeting 5.5GHz is implemented in 0.35μm SiGe BiCMOS technology. The presented power amplifier schematic has a two-stage single-ended common-emitter structure with 3.3V voltage supply. The measured maximum output power can reach 16.52dBm, and the PAE is 17.45% at P1dB.

AB - A fully integrated high-linearity power amplifier targeting 5.5GHz is implemented in 0.35μm SiGe BiCMOS technology. The presented power amplifier schematic has a two-stage single-ended common-emitter structure with 3.3V voltage supply. The measured maximum output power can reach 16.52dBm, and the PAE is 17.45% at P1dB.

UR - https://www.scopus.com/pages/publications/84874893072

U2 - 10.1109/ICSICT.2012.6467612

DO - 10.1109/ICSICT.2012.6467612

M3 - 会议稿件

AN - SCOPUS:84874893072

SN - 9781467324724

T3 - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

BT - ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

Y2 - 29 October 2012 through 1 November 2012

ER -

Yan Q, Hua L, Shi CQ , Zhang RX, Lai ZS. A fully integrated 0.35μm SiGe power amplifier design. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2012. 6467612. (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2012.6467612

A fully integrated 0.35μm SiGe power amplifier design

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