@inproceedings{ddf1cd604fb24678b06dab0e669a5eef,
title = "A Fast Transient Response Capacitor-Less LDO with 123 nA Ultra-Low Quiescent Current",
abstract = "This paper presents an output capacitor-less, NMOS regulation FET low-dropout regulator (LDO) with fast load transient response in 55 nm CMOS process. The LDO employs a push-pull error amplifier to achieve high slew rate at low quiescent current and a bidirectional dynamic biasing technique to further improve the load transient response, with barely extra quiescent current. The error amplifier includes a common-gate input stage, whose low input resistance improves stability of the LDO over a wide range of load currents. Due to the low output impedance, NMOS regulation FET is used to improve the transient response. The simulated results show that the LDO with a power supply range from 2.5 to 3.6 V achieves a stable 1.2 V output. When the load current changes in the range of 200 μA-10 mA with a rise time and a fall time of 200 ns, the LDO can settle within 2.7 μs under a quiescent current of 123 nA.",
keywords = "CMOS, capacitor-less LDO, fast transient response, ultra-power",
author = "Xuhong Li and Tao Wang and Runxi Zhang and Chunqi Shi",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 3rd IEEE International Conference on Circuits and Systems, ICCS 2021 ; Conference date: 30-10-2021 Through 02-11-2021",
year = "2021",
doi = "10.1109/ICCS52645.2021.9697200",
language = "英语",
series = "2021 IEEE 3rd International Conference on Circuits and Systems, ICCS 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "46--50",
booktitle = "2021 IEEE 3rd International Conference on Circuits and Systems, ICCS 2021",
address = "美国",
}