A double active gm-boosted-based inductorless differential wideband low-noise amplifier

Rong Zhang; Cen Chen; Zhi Li; Zhongqian Fu; Shengxi Diao; Fujiang Lin

doi:10.1109/IEEE-IWS.2015.7164540

A double active g_m-boosted-based inductorless differential wideband low-noise amplifier

Rong Zhang, Cen Chen, Zhi Li, Zhongqian Fu, Shengxi Diao, Fujiang Lin

University of Science and Technology of China

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A double active g_m-boosted-based inductorless differential wideband low-noise amplifier (LNA) is proposed in this paper. The proposed LNA applies two common-gate (CG) stages and the capacitive cross-coupled (CCC) technique. Moreover, a noise-cancelling architecture is adopted for low noise factor (NF). The proposed LNA is simulated in a TSMC 0.18-μm RF CMOS process.Within DC-1.2GHz, the LNA achieves 20dB S₂₁, minimal NF (with output buffer) of 3.2dB, and IIP3 of -8.9 dBm. The power consumption is 3.6mW with 1V power supply.

Original language	English
Title of host publication	2015 IEEE International Wireless Symposium, IWS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479919284
DOIs	https://doi.org/10.1109/IEEE-IWS.2015.7164540
State	Published - 22 Jul 2015
Externally published	Yes
Event	IEEE International Wireless Symposium, IWS 2015 - Shenzhen, China Duration: 30 Mar 2015 → 1 Apr 2015

Publication series

Name	2015 IEEE International Wireless Symposium, IWS 2015

Conference

Conference	IEEE International Wireless Symposium, IWS 2015
Country/Territory	China
City	Shenzhen
Period	30/03/15 → 1/04/15

Keywords

CG LNA
capacitive cross-coupled (CCC) technique
double active g-boosted
inductorless
noise-cancelling

Access to Document

10.1109/IEEE-IWS.2015.7164540

Cite this

Zhang, R., Chen, C., Li, Z., Fu, Z., Diao, S., & Lin, F. (2015). A double active g_m-boosted-based inductorless differential wideband low-noise amplifier. In 2015 IEEE International Wireless Symposium, IWS 2015 Article 7164540 (2015 IEEE International Wireless Symposium, IWS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEEE-IWS.2015.7164540

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title = "A double active gm-boosted-based inductorless differential wideband low-noise amplifier",

abstract = "A double active gm-boosted-based inductorless differential wideband low-noise amplifier (LNA) is proposed in this paper. The proposed LNA applies two common-gate (CG) stages and the capacitive cross-coupled (CCC) technique. Moreover, a noise-cancelling architecture is adopted for low noise factor (NF). The proposed LNA is simulated in a TSMC 0.18-μm RF CMOS process.Within DC-1.2GHz, the LNA achieves 20dB S21, minimal NF (with output buffer) of 3.2dB, and IIP3 of -8.9 dBm. The power consumption is 3.6mW with 1V power supply.",

keywords = "CG LNA, capacitive cross-coupled (CCC) technique, double active g-boosted, inductorless, noise-cancelling",

author = "Rong Zhang and Cen Chen and Zhi Li and Zhongqian Fu and Shengxi Diao and Fujiang Lin",

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Zhang, R, Chen, C, Li, Z, Fu, Z, Diao, S & Lin, F 2015, A double active g_m-boosted-based inductorless differential wideband low-noise amplifier. in 2015 IEEE International Wireless Symposium, IWS 2015., 7164540, 2015 IEEE International Wireless Symposium, IWS 2015, Institute of Electrical and Electronics Engineers Inc., IEEE International Wireless Symposium, IWS 2015, Shenzhen, China, 30/03/15. https://doi.org/10.1109/IEEE-IWS.2015.7164540

A double active g_m-boosted-based inductorless differential wideband low-noise amplifier. / Zhang, Rong; Chen, Cen; Li, Zhi et al.
2015 IEEE International Wireless Symposium, IWS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7164540 (2015 IEEE International Wireless Symposium, IWS 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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