A direct extraction method to determine the extrinsic resistances for an InP HBT device based on S-parameter measurement up to 110GHz

Ao Zhang; Jianjun Gao

doi:10.1088/1361-6641/ab8b1e

A direct extraction method to determine the extrinsic resistances for an InP HBT device based on S-parameter measurement up to 110GHz

Ao Zhang, Jianjun Gao

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A direct extraction method to determine the small-signal equivalent circuit model for III-V compound heterojunction bipolar transistor device is proposed in this paper. The advantage of this method is that the extrinsic resistances can be determined directly from a cut-off S-parameters measurement at the millimetre-wave frequencies (30-110 GHz) based on the T-π transformation method. After de-embedding the extrinsic elements, all intrinsic elements of the π-type model can be obtained utilizing a set of closed-form expressions. Good agreement between modeled and measured data is achieved up to 110 GHz to verify the accuracy.

Original language	English
Article number	075025
Journal	Semiconductor Science and Technology
Volume	35
Issue number	7
DOIs	https://doi.org/10.1088/1361-6641/ab8b1e
State	Published - Jul 2020

Keywords

Heterojunction bipolar transistors
extrinsic resistances
millimetre-waves
modeling
parameter extraction

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10.1088/1361-6641/ab8b1e

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title = "A direct extraction method to determine the extrinsic resistances for an InP HBT device based on S-parameter measurement up to 110GHz",

abstract = "A direct extraction method to determine the small-signal equivalent circuit model for III-V compound heterojunction bipolar transistor device is proposed in this paper. The advantage of this method is that the extrinsic resistances can be determined directly from a cut-off S-parameters measurement at the millimetre-wave frequencies (30-110 GHz) based on the T-π transformation method. After de-embedding the extrinsic elements, all intrinsic elements of the π-type model can be obtained utilizing a set of closed-form expressions. Good agreement between modeled and measured data is achieved up to 110 GHz to verify the accuracy.",

keywords = "Heterojunction bipolar transistors, extrinsic resistances, millimetre-waves, modeling, parameter extraction",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2020 IOP Publishing Ltd.",

year = "2020",

month = jul,

doi = "10.1088/1361-6641/ab8b1e",

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volume = "35",

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T1 - A direct extraction method to determine the extrinsic resistances for an InP HBT device based on S-parameter measurement up to 110GHz

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2020/7

Y1 - 2020/7

N2 - A direct extraction method to determine the small-signal equivalent circuit model for III-V compound heterojunction bipolar transistor device is proposed in this paper. The advantage of this method is that the extrinsic resistances can be determined directly from a cut-off S-parameters measurement at the millimetre-wave frequencies (30-110 GHz) based on the T-π transformation method. After de-embedding the extrinsic elements, all intrinsic elements of the π-type model can be obtained utilizing a set of closed-form expressions. Good agreement between modeled and measured data is achieved up to 110 GHz to verify the accuracy.

AB - A direct extraction method to determine the small-signal equivalent circuit model for III-V compound heterojunction bipolar transistor device is proposed in this paper. The advantage of this method is that the extrinsic resistances can be determined directly from a cut-off S-parameters measurement at the millimetre-wave frequencies (30-110 GHz) based on the T-π transformation method. After de-embedding the extrinsic elements, all intrinsic elements of the π-type model can be obtained utilizing a set of closed-form expressions. Good agreement between modeled and measured data is achieved up to 110 GHz to verify the accuracy.

KW - Heterojunction bipolar transistors

KW - extrinsic resistances

KW - millimetre-waves

KW - modeling

KW - parameter extraction

UR - https://www.scopus.com/pages/publications/85087184580

U2 - 10.1088/1361-6641/ab8b1e

DO - 10.1088/1361-6641/ab8b1e

M3 - 文章

AN - SCOPUS:85087184580

SN - 0268-1242

VL - 35

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 7

M1 - 075025

ER -

A direct extraction method to determine the extrinsic resistances for an InP HBT device based on S-parameter measurement up to 110GHz

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Keywords

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