A digitally controlled power amplifier with neutralization capacitors for Zigbee™ applications

Fei Jia, Shengxi Diao, Xuejuan Zhang, Zhongqian Fu, Fujiang Lin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This paper presents a single chip CMOS power amplifier with neutralization capacitors for Zigbee™ system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power of a PA to be controlled by baseband signal directly, so there is no need for DAC. The neutralization capacitors will increase reverse isolation. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed power amplifier has a 13.5 dB power gain, 3.48 dBm output power and 35.1% PAE at P1dB point. The core area is 0.73 × 0.55 mm 2.

Original languageEnglish
Article number125002
JournalJournal of Semiconductors
Volume33
Issue number12
DOIs
StatePublished - Dec 2012
Externally publishedYes

Keywords

  • CMOS
  • Zigbee™
  • digital control
  • neutralization
  • power amplifier

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