A CMOS Smart Temperature Sensor with Single-Point Calibration Method for Clinical Use

Chi Deng; Yun Sheng; Shengyang Wang; Wei Hu; Shengxi Diao; Dahong Qian

doi:10.1109/TCSII.2015.2483419

A CMOS Smart Temperature Sensor with Single-Point Calibration Method for Clinical Use

Chi Deng, Yun Sheng, Shengyang Wang, Wei Hu, Shengxi Diao, Dahong Qian

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

A smart temperature sensor has been realized using a Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm standard CMOS process. Substrate positive-negative-positive (PNP) transistors are used to extract the temperature information. Using the techniques of dynamic element matching, single-Transistor approach, and offset cancellation, the process spread between batches on the transistors becomes the main inaccuracy sources of the temperature sensor. The sensor uses a single-point calibration method that reduces the process spread and simplifies trimming. The temperature sensor can realize an inaccuracy (± 3 δ) within ±0.1 °C in the temperature range from 20 °C to 50 °C after single-point calibration. The average power consumption of the sensor is 16 μ{W} at the conversion rate of 10 Hz. These properties allow the use of the temperature sensor in clinical electronic thermometers.

Original language	English
Article number	7279094
Pages (from-to)	136-140
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	63
Issue number	2
DOIs	https://doi.org/10.1109/TCSII.2015.2483419
State	Published - Feb 2016
Externally published	Yes

Keywords

Single-point calibration
Substrate PNP transistors
Temperature sensor

Access to Document

10.1109/TCSII.2015.2483419

Cite this

@article{f7f76fee01b244e6b09526d2f03d5a78,

title = "A CMOS Smart Temperature Sensor with Single-Point Calibration Method for Clinical Use",

abstract = "A smart temperature sensor has been realized using a Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm standard CMOS process. Substrate positive-negative-positive (PNP) transistors are used to extract the temperature information. Using the techniques of dynamic element matching, single-Transistor approach, and offset cancellation, the process spread between batches on the transistors becomes the main inaccuracy sources of the temperature sensor. The sensor uses a single-point calibration method that reduces the process spread and simplifies trimming. The temperature sensor can realize an inaccuracy (± 3 δ) within ±0.1 °C in the temperature range from 20 °C to 50 °C after single-point calibration. The average power consumption of the sensor is 16 μ\{W\} at the conversion rate of 10 Hz. These properties allow the use of the temperature sensor in clinical electronic thermometers.",

keywords = "Single-point calibration, Substrate PNP transistors, Temperature sensor",

author = "Chi Deng and Yun Sheng and Shengyang Wang and Wei Hu and Shengxi Diao and Dahong Qian",

note = "Publisher Copyright: {\textcopyright} 2004-2012 IEEE.",

year = "2016",

month = feb,

doi = "10.1109/TCSII.2015.2483419",

language = "英语",

volume = "63",

pages = "136--140",

journal = "IEEE Transactions on Circuits and Systems II: Express Briefs",

issn = "1549-7747",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - A CMOS Smart Temperature Sensor with Single-Point Calibration Method for Clinical Use

AU - Deng, Chi

AU - Sheng, Yun

AU - Wang, Shengyang

AU - Hu, Wei

AU - Diao, Shengxi

AU - Qian, Dahong

PY - 2016/2

Y1 - 2016/2

N2 - A smart temperature sensor has been realized using a Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm standard CMOS process. Substrate positive-negative-positive (PNP) transistors are used to extract the temperature information. Using the techniques of dynamic element matching, single-Transistor approach, and offset cancellation, the process spread between batches on the transistors becomes the main inaccuracy sources of the temperature sensor. The sensor uses a single-point calibration method that reduces the process spread and simplifies trimming. The temperature sensor can realize an inaccuracy (± 3 δ) within ±0.1 °C in the temperature range from 20 °C to 50 °C after single-point calibration. The average power consumption of the sensor is 16 μ{W} at the conversion rate of 10 Hz. These properties allow the use of the temperature sensor in clinical electronic thermometers.

AB - A smart temperature sensor has been realized using a Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-μm standard CMOS process. Substrate positive-negative-positive (PNP) transistors are used to extract the temperature information. Using the techniques of dynamic element matching, single-Transistor approach, and offset cancellation, the process spread between batches on the transistors becomes the main inaccuracy sources of the temperature sensor. The sensor uses a single-point calibration method that reduces the process spread and simplifies trimming. The temperature sensor can realize an inaccuracy (± 3 δ) within ±0.1 °C in the temperature range from 20 °C to 50 °C after single-point calibration. The average power consumption of the sensor is 16 μ{W} at the conversion rate of 10 Hz. These properties allow the use of the temperature sensor in clinical electronic thermometers.

KW - Single-point calibration

KW - Substrate PNP transistors

KW - Temperature sensor

UR - https://www.scopus.com/pages/publications/84962222979

U2 - 10.1109/TCSII.2015.2483419

DO - 10.1109/TCSII.2015.2483419

M3 - 文章

AN - SCOPUS:84962222979

SN - 1549-7747

VL - 63

SP - 136

EP - 140

JO - IEEE Transactions on Circuits and Systems II: Express Briefs

JF - IEEE Transactions on Circuits and Systems II: Express Briefs

IS - 2

M1 - 7279094

ER -

A CMOS Smart Temperature Sensor with Single-Point Calibration Method for Clinical Use

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this