Abstract
A 2.45-GHz RFID tag chip was designed on standard 0.25-μm CMOS process. Using only MOS devices, the low-Vt rectifier circuit produces 100μW of power with 2dBm input. The tag IC with bi-directional communication and anti-collision features can be read from a distance of up to 15cm under a reader power of 250mW. The die area of 0.79mm2 includes a 128-bit rewriteable non-volatile memory.
| Original language | English |
|---|---|
| Article number | RTU1A-4 |
| Pages (from-to) | 365-368 |
| Number of pages | 4 |
| Journal | IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers |
| State | Published - 2005 |
| Externally published | Yes |
| Event | 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States Duration: 12 Jun 2005 → 14 Jun 2005 |
Keywords
- Anti-collision
- Backscattering
- CMOS
- Non-volatile memory
- RFID
- Rectifier
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