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A CMOS 2.45-GHz radio frequency identification tag IC with read/write memory

  • Wooi Gan Yeoh*
  • , Yeung Bun Choi
  • , Kok Yin Tham
  • , Sheng Xi Diao
  • , Yi Song Li
  • *Corresponding author for this work
  • Agency for Science, Technology and Research, Singapore
  • (S) Pte. Ltd.

Research output: Contribution to journalConference articlepeer-review

Abstract

A 2.45-GHz RFID tag chip was designed on standard 0.25-μm CMOS process. Using only MOS devices, the low-Vt rectifier circuit produces 100μW of power with 2dBm input. The tag IC with bi-directional communication and anti-collision features can be read from a distance of up to 15cm under a reader power of 250mW. The die area of 0.79mm2 includes a 128-bit rewriteable non-volatile memory.

Original languageEnglish
Article numberRTU1A-4
Pages (from-to)365-368
Number of pages4
JournalIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
StatePublished - 2005
Externally publishedYes
Event2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States
Duration: 12 Jun 200514 Jun 2005

Keywords

  • Anti-collision
  • Backscattering
  • CMOS
  • Non-volatile memory
  • RFID
  • Rectifier

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