Abstract
Highly oriented β-FeSi2 film on Si(111) was prepared by reactive deposition solid phase epitaxy. Photoreflectance measurements have been carried out near the absorption edge at room temperature. The exact direct transition has been determined at Eg=0.871 eV. Photocurrent spectra of the sample indicated that the surface recombination velocity becomes very small due to the improvement of crystal quality.
| Original language | English |
|---|---|
| Pages (from-to) | 385-388 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 97 |
| Issue number | 5 |
| DOIs | |
| State | Published - Feb 1996 |
| Externally published | Yes |
Keywords
- Absorption
- Optical transition
- Photocurrent
- Photoreflectance
- β-FeSi film