A clarification of optical transition of β-FeSi2 film

  • Lianwei Wang*
  • , Chenglu Lin
  • , Xiang Dong Chen
  • , Shichang Zou
  • , Linhong Qin
  • , Hongtao Shi
  • , W. Z. Shen
  • , M. Östling
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Highly oriented β-FeSi2 film on Si(111) was prepared by reactive deposition solid phase epitaxy. Photoreflectance measurements have been carried out near the absorption edge at room temperature. The exact direct transition has been determined at Eg=0.871 eV. Photocurrent spectra of the sample indicated that the surface recombination velocity becomes very small due to the improvement of crystal quality.

Original languageEnglish
Pages (from-to)385-388
Number of pages4
JournalSolid State Communications
Volume97
Issue number5
DOIs
StatePublished - Feb 1996
Externally publishedYes

Keywords

  • Absorption
  • Optical transition
  • Photocurrent
  • Photoreflectance
  • β-FeSi film

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