A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology

Bo Chen; Li Shen; Supeng Liu; Yuanjin Zheng; Jianjun Gao

doi:10.1007/s10470-014-0412-z

A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology

Bo Chen^*
, Li Shen
, Supeng Liu
, Yuanjin Zheng
, Jianjun Gao

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This paper presents the design and characterization of a broadband millimeter-wave PA realized in a 130 nm standard RF-CMOS process with 8-metal-layer and transistor f_T/f_MAX of 117/161 GHz. The power amplifier adopts transformer and transmission line matching topology which achieves small area of die and wide bandwidth. A new lumped transformer model is proposed to facilitate the optimization. The measured 3 dB bandwidth is 20 GHz (from 47 to 67 GHz), the measured maximum gain is about 8.6 dB, output 1 dB compression power is 9.36 dBm and consumes 90 mA current from DC supply 1.2 V. Including GSG and DC pads, the PA occupies a compact chip area of 0.318 mm², and without pads, the PA occupies 0.141 mm².

Original language	English
Pages (from-to)	537-547
Number of pages	11
Journal	Analog Integrated Circuits and Signal Processing
Volume	81
Issue number	2
DOIs	https://doi.org/10.1007/s10470-014-0412-z
State	Published - 22 Oct 2014

Keywords

60 GHz
CMOS
Millimeter wave
Power amplifier
Transformer model

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10.1007/s10470-014-0412-z

Cite this

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title = "A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology",

abstract = "This paper presents the design and characterization of a broadband millimeter-wave PA realized in a 130 nm standard RF-CMOS process with 8-metal-layer and transistor fT/fMAX of 117/161 GHz. The power amplifier adopts transformer and transmission line matching topology which achieves small area of die and wide bandwidth. A new lumped transformer model is proposed to facilitate the optimization. The measured 3 dB bandwidth is 20 GHz (from 47 to 67 GHz), the measured maximum gain is about 8.6 dB, output 1 dB compression power is 9.36 dBm and consumes 90 mA current from DC supply 1.2 V. Including GSG and DC pads, the PA occupies a compact chip area of 0.318 mm2, and without pads, the PA occupies 0.141 mm2.",

keywords = "60 GHz, CMOS, Millimeter wave, Power amplifier, Transformer model",

author = "Bo Chen and Li Shen and Supeng Liu and Yuanjin Zheng and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2014, Springer Science+Business Media New York.",

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doi = "10.1007/s10470-014-0412-z",

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TY - JOUR

T1 - A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology

AU - Chen, Bo

AU - Shen, Li

AU - Liu, Supeng

AU - Zheng, Yuanjin

AU - Gao, Jianjun

PY - 2014/10/22

Y1 - 2014/10/22

N2 - This paper presents the design and characterization of a broadband millimeter-wave PA realized in a 130 nm standard RF-CMOS process with 8-metal-layer and transistor fT/fMAX of 117/161 GHz. The power amplifier adopts transformer and transmission line matching topology which achieves small area of die and wide bandwidth. A new lumped transformer model is proposed to facilitate the optimization. The measured 3 dB bandwidth is 20 GHz (from 47 to 67 GHz), the measured maximum gain is about 8.6 dB, output 1 dB compression power is 9.36 dBm and consumes 90 mA current from DC supply 1.2 V. Including GSG and DC pads, the PA occupies a compact chip area of 0.318 mm2, and without pads, the PA occupies 0.141 mm2.

AB - This paper presents the design and characterization of a broadband millimeter-wave PA realized in a 130 nm standard RF-CMOS process with 8-metal-layer and transistor fT/fMAX of 117/161 GHz. The power amplifier adopts transformer and transmission line matching topology which achieves small area of die and wide bandwidth. A new lumped transformer model is proposed to facilitate the optimization. The measured 3 dB bandwidth is 20 GHz (from 47 to 67 GHz), the measured maximum gain is about 8.6 dB, output 1 dB compression power is 9.36 dBm and consumes 90 mA current from DC supply 1.2 V. Including GSG and DC pads, the PA occupies a compact chip area of 0.318 mm2, and without pads, the PA occupies 0.141 mm2.

KW - 60 GHz

KW - CMOS

KW - Millimeter wave

KW - Power amplifier

KW - Transformer model

UR - https://www.scopus.com/pages/publications/84919419974

U2 - 10.1007/s10470-014-0412-z

DO - 10.1007/s10470-014-0412-z

M3 - 文章

AN - SCOPUS:84919419974

SN - 0925-1030

VL - 81

SP - 537

EP - 547

JO - Analog Integrated Circuits and Signal Processing

JF - Analog Integrated Circuits and Signal Processing

IS - 2

ER -

A broadband, high isolation millimeter-wave CMOS power amplifier using a transformer and transmission line matching topology

Abstract

Keywords

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