TY - GEN
T1 - A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF
AU - Zou, Linfeng
AU - Zhao, Kangjie
AU - Fang, Zonghua
AU - Huang, Leilei
AU - Liu, Boxiao
AU - Shi, Chunqi
AU - Chen, Guangsheng
AU - Chen, Jinghong
AU - Zhang, Runxi
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - This paper presents a 74.8-88.8 GHz low-noise amplifier (LNA) in a 55-nm CMOS technology. The LNA employs one common-gate (CG) stage, one common-source (CS) stage, and two cascode stages. A hybrid broadband interstage network (HBIN) is developed to extend the amplifier bandwidth. An inductor-feedback common-gate-shorting (IFCGS) technique is proposed to improve the gain and output 1dB compression point (OP1dB). An out-of-phase-dual-coupling (OPDC) transformer structure is also developed to achieve gm-boost and reduce the noise of the CG stage. Benefiting from the proposed techniques, the LNA achieves a measured -3dB bandwidth of 14 GHz, a 17.1 dB peak gain, a minimum noise figure of 6.39 dB, and 4.73 dBm OP1dB at 80 GHz while consuming 72.4 mW of power.
AB - This paper presents a 74.8-88.8 GHz low-noise amplifier (LNA) in a 55-nm CMOS technology. The LNA employs one common-gate (CG) stage, one common-source (CS) stage, and two cascode stages. A hybrid broadband interstage network (HBIN) is developed to extend the amplifier bandwidth. An inductor-feedback common-gate-shorting (IFCGS) technique is proposed to improve the gain and output 1dB compression point (OP1dB). An out-of-phase-dual-coupling (OPDC) transformer structure is also developed to achieve gm-boost and reduce the noise of the CG stage. Benefiting from the proposed techniques, the LNA achieves a measured -3dB bandwidth of 14 GHz, a 17.1 dB peak gain, a minimum noise figure of 6.39 dB, and 4.73 dBm OP1dB at 80 GHz while consuming 72.4 mW of power.
KW - E-band
KW - Low-noise amplifier (LNA)
KW - g-boosted
KW - inductor feedback common-gate shorting (IFCGS)
KW - linearity
KW - millimeter wave (mm wave)
KW - wideband
UR - https://www.scopus.com/pages/publications/85168546480
U2 - 10.1109/IMS37964.2023.10188098
DO - 10.1109/IMS37964.2023.10188098
M3 - 会议稿件
AN - SCOPUS:85168546480
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 60
EP - 63
BT - 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023
Y2 - 11 June 2023 through 16 June 2023
ER -