A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF

Linfeng Zou; Kangjie Zhao; Zonghua Fang; Leilei Huang; Boxiao Liu; Chunqi Shi; Guangsheng Chen; Jinghong Chen; Runxi Zhang

doi:10.1109/IMS37964.2023.10188098

A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF

Linfeng Zou^*, Kangjie Zhao, Zonghua Fang, Leilei Huang, Boxiao Liu, Chunqi Shi, Guangsheng Chen, Jinghong Chen, Runxi Zhang

^*Corresponding author for this work

School of Communication and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

This paper presents a 74.8-88.8 GHz low-noise amplifier (LNA) in a 55-nm CMOS technology. The LNA employs one common-gate (CG) stage, one common-source (CS) stage, and two cascode stages. A hybrid broadband interstage network (HBIN) is developed to extend the amplifier bandwidth. An inductor-feedback common-gate-shorting (IFCGS) technique is proposed to improve the gain and output 1dB compression point (OP1dB). An out-of-phase-dual-coupling (OPDC) transformer structure is also developed to achieve gm-boost and reduce the noise of the CG stage. Benefiting from the proposed techniques, the LNA achieves a measured -3dB bandwidth of 14 GHz, a 17.1 dB peak gain, a minimum noise figure of 6.39 dB, and 4.73 dBm OP1dB at 80 GHz while consuming 72.4 mW of power.

Original language	English
Title of host publication	2023 IEEE/MTT-S International Microwave Symposium, IMS 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	60-63
Number of pages	4
ISBN (Electronic)	9798350347647
DOIs	https://doi.org/10.1109/IMS37964.2023.10188098
State	Published - 2023
Event	2023 IEEE/MTT-S International Microwave Symposium, IMS 2023 - San Diego, United States Duration: 11 Jun 2023 → 16 Jun 2023

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2023-June
ISSN (Print)	0149-645X

Conference

Conference	2023 IEEE/MTT-S International Microwave Symposium, IMS 2023
Country/Territory	United States
City	San Diego
Period	11/06/23 → 16/06/23

Keywords

E-band
Low-noise amplifier (LNA)
g-boosted
inductor feedback common-gate shorting (IFCGS)
linearity
millimeter wave (mm wave)
wideband

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10.1109/IMS37964.2023.10188098

Cite this

Zou, L., Zhao, K., Fang, Z., Huang, L., Liu, B., Shi, C., Chen, G., Chen, J., & Zhang, R. (2023). A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF. In 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023 (pp. 60-63). (IEEE MTT-S International Microwave Symposium Digest; Vol. 2023-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMS37964.2023.10188098

@inproceedings{b4c35b25e8dc4f3a88091ea0854b1d46,

title = "A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF",

abstract = "This paper presents a 74.8-88.8 GHz low-noise amplifier (LNA) in a 55-nm CMOS technology. The LNA employs one common-gate (CG) stage, one common-source (CS) stage, and two cascode stages. A hybrid broadband interstage network (HBIN) is developed to extend the amplifier bandwidth. An inductor-feedback common-gate-shorting (IFCGS) technique is proposed to improve the gain and output 1dB compression point (OP1dB). An out-of-phase-dual-coupling (OPDC) transformer structure is also developed to achieve gm-boost and reduce the noise of the CG stage. Benefiting from the proposed techniques, the LNA achieves a measured -3dB bandwidth of 14 GHz, a 17.1 dB peak gain, a minimum noise figure of 6.39 dB, and 4.73 dBm OP1dB at 80 GHz while consuming 72.4 mW of power.",

keywords = "E-band, Low-noise amplifier (LNA), g-boosted, inductor feedback common-gate shorting (IFCGS), linearity, millimeter wave (mm wave), wideband",

author = "Linfeng Zou and Kangjie Zhao and Zonghua Fang and Leilei Huang and Boxiao Liu and Chunqi Shi and Guangsheng Chen and Jinghong Chen and Runxi Zhang",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023 ; Conference date: 11-06-2023 Through 16-06-2023",

year = "2023",

doi = "10.1109/IMS37964.2023.10188098",

language = "英语",

series = "IEEE MTT-S International Microwave Symposium Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "60--63",

booktitle = "2023 IEEE/MTT-S International Microwave Symposium, IMS 2023",

address = "美国",

}

Zou, L, Zhao, K, Fang, Z, Huang, L, Liu, B , Shi, C, Chen, G, Chen, J & Zhang, R 2023, A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF. in 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023. IEEE MTT-S International Microwave Symposium Digest, vol. 2023-June, Institute of Electrical and Electronics Engineers Inc., pp. 60-63, 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023, San Diego, United States, 11/06/23. https://doi.org/10.1109/IMS37964.2023.10188098

A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF. / Zou, Linfeng; Zhao, Kangjie; Fang, Zonghua et al.
2023 IEEE/MTT-S International Microwave Symposium, IMS 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 60-63 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2023-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF

AU - Zou, Linfeng

AU - Zhao, Kangjie

AU - Fang, Zonghua

AU - Huang, Leilei

AU - Liu, Boxiao

AU - Shi, Chunqi

AU - Chen, Guangsheng

AU - Chen, Jinghong

AU - Zhang, Runxi

PY - 2023

Y1 - 2023

N2 - This paper presents a 74.8-88.8 GHz low-noise amplifier (LNA) in a 55-nm CMOS technology. The LNA employs one common-gate (CG) stage, one common-source (CS) stage, and two cascode stages. A hybrid broadband interstage network (HBIN) is developed to extend the amplifier bandwidth. An inductor-feedback common-gate-shorting (IFCGS) technique is proposed to improve the gain and output 1dB compression point (OP1dB). An out-of-phase-dual-coupling (OPDC) transformer structure is also developed to achieve gm-boost and reduce the noise of the CG stage. Benefiting from the proposed techniques, the LNA achieves a measured -3dB bandwidth of 14 GHz, a 17.1 dB peak gain, a minimum noise figure of 6.39 dB, and 4.73 dBm OP1dB at 80 GHz while consuming 72.4 mW of power.

AB - This paper presents a 74.8-88.8 GHz low-noise amplifier (LNA) in a 55-nm CMOS technology. The LNA employs one common-gate (CG) stage, one common-source (CS) stage, and two cascode stages. A hybrid broadband interstage network (HBIN) is developed to extend the amplifier bandwidth. An inductor-feedback common-gate-shorting (IFCGS) technique is proposed to improve the gain and output 1dB compression point (OP1dB). An out-of-phase-dual-coupling (OPDC) transformer structure is also developed to achieve gm-boost and reduce the noise of the CG stage. Benefiting from the proposed techniques, the LNA achieves a measured -3dB bandwidth of 14 GHz, a 17.1 dB peak gain, a minimum noise figure of 6.39 dB, and 4.73 dBm OP1dB at 80 GHz while consuming 72.4 mW of power.

KW - E-band

KW - Low-noise amplifier (LNA)

KW - g-boosted

KW - inductor feedback common-gate shorting (IFCGS)

KW - linearity

KW - millimeter wave (mm wave)

KW - wideband

UR - https://www.scopus.com/pages/publications/85168546480

U2 - 10.1109/IMS37964.2023.10188098

DO - 10.1109/IMS37964.2023.10188098

M3 - 会议稿件

AN - SCOPUS:85168546480

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 60

EP - 63

BT - 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE/MTT-S International Microwave Symposium, IMS 2023

Y2 - 11 June 2023 through 16 June 2023

ER -

A 74.8-88.8 GHz Wideband CMOS LNA Achieving +4.73 dBm OP1dB and 6.39 dB Minimum NF

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Keywords

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