A 65 nm CMOS +14 dBm-Psat and 10%-PAE 81-86 GHz power amplifier with parallel combiner

Guang Zhong; Yong Huang; Runxi Zhang; Chunqi Shi

doi:10.1109/APMC.2015.7413378

A 65 nm CMOS +14 dBm-P_sat and 10%-PAE 81-86 GHz power amplifier with parallel combiner

Guang Zhong
, Yong Huang
, Runxi Zhang
, Chunqi Shi

School of Communication and Electronic Engineering

East China Normal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents an 81-86 GHz E-band power amplifier fabricated with 65 nm CMOS process. A passive splitter is designed to transfer a pair of differential signal into two pairs of differential signals and satisfy phase requirement of output parallel power combiner. A substitution method is presented to trade off the simulation time and accuracy while using EM simulator to characterize the MOS transistor's access lines with stacked via arrays. The proposed PA achieves 9.5 dBm P_1-dB, 14.16 dBm P_SAT and 21.5 dB maximum power gain at 83.5 GHz. The PAEs at P_1-dB and P_SAT are 3.6% and 10.13% respectively.

Original language	English
Title of host publication	2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015
Editors	Fan Meng, Wei Hong, Guang-Qi Yang, Zhe Song, Xiao-Wei Zhu
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479987658
DOIs	https://doi.org/10.1109/APMC.2015.7413378
State	Published - 2015
Event	2015 Asia-Pacific Microwave Conference, APMC 2015 - Nanjing, China Duration: 6 Dec 2015 → 9 Dec 2015

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	3

Conference

Conference	2015 Asia-Pacific Microwave Conference, APMC 2015
Country/Territory	China
City	Nanjing
Period	6/12/15 → 9/12/15

Keywords

Differential input
E-band
EM-simulation
parallel power amplifier
power splitter

Access to Document

10.1109/APMC.2015.7413378

Cite this

Zhong, G., Huang, Y., Zhang, R., & Shi, C. (2015). A 65 nm CMOS +14 dBm-P_sat and 10%-PAE 81-86 GHz power amplifier with parallel combiner. In F. Meng, W. Hong, G.-Q. Yang, Z. Song, & X.-W. Zhu (Eds.), 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015 Article 7413378 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC.2015.7413378

Zhong, Guang ; Huang, Yong ; Zhang, Runxi et al. / A 65 nm CMOS +14 dBm-P_sat and 10%-PAE 81-86 GHz power amplifier with parallel combiner. 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015. editor / Fan Meng ; Wei Hong ; Guang-Qi Yang ; Zhe Song ; Xiao-Wei Zhu. Institute of Electrical and Electronics Engineers Inc., 2015. (Asia-Pacific Microwave Conference Proceedings, APMC).

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title = "A 65 nm CMOS +14 dBm-Psat and 10\%-PAE 81-86 GHz power amplifier with parallel combiner",

abstract = "This paper presents an 81-86 GHz E-band power amplifier fabricated with 65 nm CMOS process. A passive splitter is designed to transfer a pair of differential signal into two pairs of differential signals and satisfy phase requirement of output parallel power combiner. A substitution method is presented to trade off the simulation time and accuracy while using EM simulator to characterize the MOS transistor's access lines with stacked via arrays. The proposed PA achieves 9.5 dBm P1-dB, 14.16 dBm PSAT and 21.5 dB maximum power gain at 83.5 GHz. The PAEs at P1-dB and PSAT are 3.6\% and 10.13\% respectively.",

keywords = "Differential input, E-band, EM-simulation, parallel power amplifier, power splitter",

author = "Guang Zhong and Yong Huang and Runxi Zhang and Chunqi Shi",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 Asia-Pacific Microwave Conference, APMC 2015 ; Conference date: 06-12-2015 Through 09-12-2015",

year = "2015",

doi = "10.1109/APMC.2015.7413378",

language = "英语",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Fan Meng and Wei Hong and Guang-Qi Yang and Zhe Song and Xiao-Wei Zhu",

booktitle = "2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015",

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}

Zhong, G, Huang, Y, Zhang, R & Shi, C 2015, A 65 nm CMOS +14 dBm-P_sat and 10%-PAE 81-86 GHz power amplifier with parallel combiner. in F Meng, W Hong, G-Q Yang, Z Song & X-W Zhu (eds), 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015., 7413378, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 3, Institute of Electrical and Electronics Engineers Inc., 2015 Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6/12/15. https://doi.org/10.1109/APMC.2015.7413378

A 65 nm CMOS +14 dBm-P_sat and 10%-PAE 81-86 GHz power amplifier with parallel combiner. / Zhong, Guang; Huang, Yong; Zhang, Runxi et al.
2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015. ed. / Fan Meng; Wei Hong; Guang-Qi Yang; Zhe Song; Xiao-Wei Zhu. Institute of Electrical and Electronics Engineers Inc., 2015. 7413378 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Shi, Chunqi

PY - 2015

Y1 - 2015

N2 - This paper presents an 81-86 GHz E-band power amplifier fabricated with 65 nm CMOS process. A passive splitter is designed to transfer a pair of differential signal into two pairs of differential signals and satisfy phase requirement of output parallel power combiner. A substitution method is presented to trade off the simulation time and accuracy while using EM simulator to characterize the MOS transistor's access lines with stacked via arrays. The proposed PA achieves 9.5 dBm P1-dB, 14.16 dBm PSAT and 21.5 dB maximum power gain at 83.5 GHz. The PAEs at P1-dB and PSAT are 3.6% and 10.13% respectively.

AB - This paper presents an 81-86 GHz E-band power amplifier fabricated with 65 nm CMOS process. A passive splitter is designed to transfer a pair of differential signal into two pairs of differential signals and satisfy phase requirement of output parallel power combiner. A substitution method is presented to trade off the simulation time and accuracy while using EM simulator to characterize the MOS transistor's access lines with stacked via arrays. The proposed PA achieves 9.5 dBm P1-dB, 14.16 dBm PSAT and 21.5 dB maximum power gain at 83.5 GHz. The PAEs at P1-dB and PSAT are 3.6% and 10.13% respectively.

KW - Differential input

KW - E-band

KW - EM-simulation

KW - parallel power amplifier

KW - power splitter

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A2 - Meng, Fan

A2 - Hong, Wei

A2 - Yang, Guang-Qi

A2 - Song, Zhe

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 Asia-Pacific Microwave Conference, APMC 2015

Y2 - 6 December 2015 through 9 December 2015

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Zhong G, Huang Y, Zhang R , Shi C. A 65 nm CMOS +14 dBm-P_sat and 10%-PAE 81-86 GHz power amplifier with parallel combiner. In Meng F, Hong W, Yang GQ, Song Z, Zhu XW, editors, 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7413378. (Asia-Pacific Microwave Conference Proceedings, APMC). doi: 10.1109/APMC.2015.7413378