A 64.5-88 GHz coupling-concerned CMOS LNA with >10 dB Gain and 5 dB Minimum NF

Kaijuan Zhang, Chunqi Shi, Guangsheng Chen, Jinghong Chen, Runxi Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

This paper presents a differential 64.5-88 GHz wideband low-noise amplifier (LNA) in a 55-nm CMOS technology. The LNA is consisted of two common-source (CS) stages and one cascode stage. To achieve a wide bandwidth (BW), an interstage coupling network scheme utilizing step-up transformers and co-optimizing the interstage transimpedance responses is developed. A new transformer-based dual-coupling (TBDC) gm-boosted topology is proposed to simultaneously achieve high gain and low noise. In addition, capacitive neutralization and common-gate-shorting (CGS) techniques are utilized to improve gain and stability. The LNA achieves a peak gain of 15 dB, a wideband gain of >10 dB over 64.5-88 GHz, a S11 of <-10 dB over 60-90 GHz, and a minimum noise figure of 5 dB, while consuming 72.7 mW power. The input PldB is -12.2 dBm at 70 GHz and -12.8 dBm at 80 GHz, respectively.

Original languageEnglish
Title of host publicationIMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages337-340
Number of pages4
ISBN (Electronic)9781728168159
DOIs
StatePublished - Aug 2020
Event2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States
Duration: 4 Aug 20206 Aug 2020

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2020-August
ISSN (Print)0149-645X

Conference

Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Country/TerritoryUnited States
CityVirtual, Los Angeles
Period4/08/206/08/20

Keywords

  • Capacitive neutralization
  • Common-gate-shorting (CGS)
  • Gm -boosted
  • Interstage coupling network
  • Low-noise amplifier
  • Transformer-based dual-coupling (TBDC)

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