A 64-84 GHz CMOS LNA with excellent gain flatness for wideband mmW applications

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Abstract

This paper presents a wideband millimeter wave (mmW) LNA fabricated in a 55-nm CMOS process. Inter-stage transformer peak splitting and gain equalization techniques are proposed to improve bandwidth and gain flatness. A transformer-based anti-phase coupling (TBAC) method is developed to enhance effective transconductance boosting, while optimizing noise figure (NF). The LNA achieves a peak gain of 11.8 dB with a gain variation of less than ±0.8 dB, a flat gain bandwidth (FGBW) of 15 GHz (66-81 GHz) and a BW3dB of 20 GHz (64-84 GHz). The measured NFmin is 5.09 dB at 75 GHz and the input-referred 1dB compression point (IP1dB) is -5.8 dBm at 78 GHz. The LNA consumes 40 mA from 1 V power supply.

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728192017
DOIs
StatePublished - 2021
Event53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021 - Daegu, Korea, Republic of
Duration: 22 May 202128 May 2021

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2021-May
ISSN (Print)0271-4310

Conference

Conference53rd IEEE International Symposium on Circuits and Systems, ISCAS 2021
Country/TerritoryKorea, Republic of
CityDaegu
Period22/05/2128/05/21

Keywords

  • Bandwidth extension
  • Double-peak gain equalization
  • Gain flatness
  • Inter-stage peak splitting
  • LNA
  • Transformer-based anti-phase coupling

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