A 60 GHz transformer-coupled neutralized low power CMOS power amplifier

Bo Chen; Li Shen; Jianjun Gao

doi:10.1002/mop.29378

A 60 GHz transformer-coupled neutralized low power CMOS power amplifier

Bo Chen, Li Shen, Jianjun Gao

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A 60 GHz transformer-coupled class AB 3-stage low power amplifier (PA) has been implemented in a 130 nm standard RF-CMOS process. The transformer, featuring direct impedance transformation and power combining is suitable for 60 GHz power amplifier design. This power amplifier operates from 1.2 V supply with 9.9 dB gain at 62 GHz, dissipates 58 mW DC power, and the reverse isolation is better than 39 dB from 50 to 67 GHz.

Original language	English
Pages (from-to)	2487-2491
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	57
Issue number	11
DOIs	https://doi.org/10.1002/mop.29378
State	Published - 1 Nov 2015

Keywords

CMOS
millimeter wave
power amplifier
transformer

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10.1002/mop.29378

Cite this

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title = "A 60 GHz transformer-coupled neutralized low power CMOS power amplifier",

abstract = "A 60 GHz transformer-coupled class AB 3-stage low power amplifier (PA) has been implemented in a 130 nm standard RF-CMOS process. The transformer, featuring direct impedance transformation and power combining is suitable for 60 GHz power amplifier design. This power amplifier operates from 1.2 V supply with 9.9 dB gain at 62 GHz, dissipates 58 mW DC power, and the reverse isolation is better than 39 dB from 50 to 67 GHz.",

keywords = "CMOS, millimeter wave, power amplifier, transformer",

author = "Bo Chen and Li Shen and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2487-2491, 2015 {\textcopyright} 2015 Wiley Periodicals, Inc.",

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AU - Gao, Jianjun

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N2 - A 60 GHz transformer-coupled class AB 3-stage low power amplifier (PA) has been implemented in a 130 nm standard RF-CMOS process. The transformer, featuring direct impedance transformation and power combining is suitable for 60 GHz power amplifier design. This power amplifier operates from 1.2 V supply with 9.9 dB gain at 62 GHz, dissipates 58 mW DC power, and the reverse isolation is better than 39 dB from 50 to 67 GHz.

AB - A 60 GHz transformer-coupled class AB 3-stage low power amplifier (PA) has been implemented in a 130 nm standard RF-CMOS process. The transformer, featuring direct impedance transformation and power combining is suitable for 60 GHz power amplifier design. This power amplifier operates from 1.2 V supply with 9.9 dB gain at 62 GHz, dissipates 58 mW DC power, and the reverse isolation is better than 39 dB from 50 to 67 GHz.

KW - CMOS

KW - millimeter wave

KW - power amplifier

KW - transformer

UR - https://www.scopus.com/pages/publications/84940396302

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DO - 10.1002/mop.29378

M3 - 文章

AN - SCOPUS:84940396302

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JO - Microwave and Optical Technology Letters

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IS - 11

ER -

A 60 GHz transformer-coupled neutralized low power CMOS power amplifier

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Keywords

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