@inproceedings{fb005301477c44f4bb28eaa253429f4c,
title = "A 3D pn junction structure for radiation energy conversion chip",
abstract = "Macroporous silicon with well defined pattern on p-type silicon has been prepared by anodization in this report. A phosphorus diffusion step is employed for the formation of three dimensional pn junction structures. The I-V and C-V have been performed to characterize the {"}high aspect ratio{"} pn junction structure. Results have indicated the possibility for such a structure as the radiation conversion chip for future portable nuclear power cell.",
author = "Jinlong Li and Shaohui Xu and Xinping Qu and Guoping Ru and Zhengyin Yu and Weili Liu and Zhitang Song and Lianwei Wang",
year = "2006",
language = "英语",
isbn = "1424400473",
series = "Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06",
pages = "123--126",
booktitle = "Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06",
note = "Extended Abstracts of the 6th International Workshop on Junction Technology, IWJT '06 ; Conference date: 15-05-2006 Through 16-05-2006",
}