A 3.4dB NF k-band LNA in 65nm CMOS technology

Jianfei Xu; Na Yan; Qiang Chen; Jianjun Gao; Xiaoyang Zeng

doi:10.1109/ISCAS.2013.6572048

A 3.4dB NF k-band LNA in 65nm CMOS technology

Jianfei Xu, Na Yan, Qiang Chen, Jianjun Gao, Xiaoyang Zeng

School of Physics and Electronic Science

Fudan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

This paper presents a k-band (18-26.5 GHz) high gain low noise amplifier (LNA) in 65-nm CMOS mixed signal process. The LNA has a peak gain of 20.46 dB at 22.45 GHz and a -3 dB bandwidth of 3.8 GHz. S11 of the chip is better than -11 dB and S22 better than -15 dB across the band. The measured smallest noise figure (NF) is 3.4 dB. The whole chip consumes 11mA current under 1.1V supply voltage and occupies an area of 710 μm × 540 μm.

Original language	English
Title of host publication	2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013
Pages	1123-1126
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2013.6572048
State	Published - 2013
Event	2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013 - Beijing, China Duration: 19 May 2013 → 23 May 2013

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Conference

Conference	2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013
Country/Territory	China
City	Beijing
Period	19/05/13 → 23/05/13

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10.1109/ISCAS.2013.6572048

Cite this

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title = "A 3.4dB NF k-band LNA in 65nm CMOS technology",

abstract = "This paper presents a k-band (18-26.5 GHz) high gain low noise amplifier (LNA) in 65-nm CMOS mixed signal process. The LNA has a peak gain of 20.46 dB at 22.45 GHz and a -3 dB bandwidth of 3.8 GHz. S11 of the chip is better than -11 dB and S22 better than -15 dB across the band. The measured smallest noise figure (NF) is 3.4 dB. The whole chip consumes 11mA current under 1.1V supply voltage and occupies an area of 710 μm × 540 μm.",

author = "Jianfei Xu and Na Yan and Qiang Chen and Jianjun Gao and Xiaoyang Zeng",

year = "2013",

doi = "10.1109/ISCAS.2013.6572048",

language = "英语",

isbn = "9781467357609",

series = "Proceedings - IEEE International Symposium on Circuits and Systems",

pages = "1123--1126",

booktitle = "2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013",

note = "2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013 ; Conference date: 19-05-2013 Through 23-05-2013",

}

Xu, J, Yan, N, Chen, Q, Gao, J & Zeng, X 2013, A 3.4dB NF k-band LNA in 65nm CMOS technology. in 2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013., 6572048, Proceedings - IEEE International Symposium on Circuits and Systems, pp. 1123-1126, 2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013, Beijing, China, 19/05/13. https://doi.org/10.1109/ISCAS.2013.6572048

TY - GEN

T1 - A 3.4dB NF k-band LNA in 65nm CMOS technology

AU - Xu, Jianfei

AU - Yan, Na

AU - Chen, Qiang

AU - Gao, Jianjun

AU - Zeng, Xiaoyang

PY - 2013

Y1 - 2013

N2 - This paper presents a k-band (18-26.5 GHz) high gain low noise amplifier (LNA) in 65-nm CMOS mixed signal process. The LNA has a peak gain of 20.46 dB at 22.45 GHz and a -3 dB bandwidth of 3.8 GHz. S11 of the chip is better than -11 dB and S22 better than -15 dB across the band. The measured smallest noise figure (NF) is 3.4 dB. The whole chip consumes 11mA current under 1.1V supply voltage and occupies an area of 710 μm × 540 μm.

AB - This paper presents a k-band (18-26.5 GHz) high gain low noise amplifier (LNA) in 65-nm CMOS mixed signal process. The LNA has a peak gain of 20.46 dB at 22.45 GHz and a -3 dB bandwidth of 3.8 GHz. S11 of the chip is better than -11 dB and S22 better than -15 dB across the band. The measured smallest noise figure (NF) is 3.4 dB. The whole chip consumes 11mA current under 1.1V supply voltage and occupies an area of 710 μm × 540 μm.

UR - https://www.scopus.com/pages/publications/84883324363

U2 - 10.1109/ISCAS.2013.6572048

DO - 10.1109/ISCAS.2013.6572048

M3 - 会议稿件

AN - SCOPUS:84883324363

SN - 9781467357609

T3 - Proceedings - IEEE International Symposium on Circuits and Systems

SP - 1123

EP - 1126

BT - 2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013

T2 - 2013 IEEE International Symposium on Circuits and Systems, ISCAS 2013

Y2 - 19 May 2013 through 23 May 2013

ER -

A 3.4dB NF k-band LNA in 65nm CMOS technology

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