A 22-nm CMOS 3.5-7.2 GHz Wideband FEM with a Balanced-Power-Combining DPA and a Dual-Resonant Input Matching LNA

  • Kangjie Zhao*
  • , Can Liu
  • , Linfeng Zou
  • , Kai Liu
  • , Yuan Xu
  • , Xinyi Jiang
  • , Ruilai Xu
  • , Wangdong Xie
  • , Yang Zhou
  • , Hao Deng
  • , Leilei Huang
  • , Chunqi Shi
  • , Lei Chen
  • , Jinghong Chen
  • , Runxi Zhang
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a 3.5-7.2 GHz wideband front-end module (FEM) implemented in 22-nm CMOS technology. The FEM consists of a digital power amplifier (DPA) and a low noise amplifier (LNA). The DPA utilizes a 4-way balanced-power-combining (BPC) network with electrical coupling compensation to minimize broadband amplitude modulation (AM) and phase modulation (PM) mismatches among the four sub-arrays. To improve efficiency and linearity, an AM-PM distortion-canceling power cell is developed. The LNA employs a dual-resonant input matching (DRIM) approach to achieve wideband input impedance and noise matching. The DPA achieves a peak output power of 30.08 dBm with a drain efficiency of 43.31% at 6 GHz. For a 40 MHz 256 -QAM signal, the average output power (Pavg) is 19.09, 21.07 and 17.18 dBm at 4.5, 6, and 7.2 GHz, respectively, with average drain efficiency (DEavg) of 20.39%, 20.6% and 18.5%. For a 20 MHz 1024-QAM signal, the Pavg is 16.7,18.25 and 17.55 dBm at 4.5,6 and 7.2 GHz with DEavg of 18.22%, 18.41% and 16.53%, respectively. The LNA achieves a peak S 21 of 18.8 dB at 6 GHz, with the noise figure (NF) of 1.7dB and S11 and S22 below -10 dB across the 3.5-7.2 GHz range.

Original languageEnglish
Title of host publication2025 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2025
EditorsJane Gu, Kenichi Okada
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages187-190
Number of pages4
ISBN (Electronic)9798331514112
DOIs
StatePublished - 2025
Event2025 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2025 - San Francisco, United States
Duration: 15 Jun 202517 Jun 2025

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517

Conference

Conference2025 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2025
Country/TerritoryUnited States
CitySan Francisco
Period15/06/2517/06/25

Keywords

  • CMOS
  • Digital Power Amplifier (DPA)
  • Front-End Module (FEM)
  • Low Noise Amplifier (LNA)
  • Wideband

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