A 22-33 GHz Wideband CMOS LNA Using Low-k Non-inverting MCCRs for 5G mmW Communication Applications

This paper presents a high gain wideband CMOS low noise amplifier (LNA) for 5G millimeter-wave (mmW) communication applications. A low-k non-inverting magnetically and capacitively coupled resonator (MCCR) is exploited in the input stage to improve gain and noise figure. The input and output MCCRs are combinatorially designed to achieve the wideband characteristic. The gain-enhanced network, the inter-stage matching inductor and the linearized diode are used to improve the middle stage gain, current efficiency and linearity. The proposed LNA is implemented in a 40-nm CMOS process and achieves a peak gain of 20.4 dB with a wideband characteristic of >17.4 dB over 22-33 GHz while consuming 32 mW power consumption. The minimum noise figure (NF) is 4.2 dB and the input-referred 1 dB (IP1dB) compression point is up to -20 dBm. The LNA occupies 0.4 mm2 area.