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A 112Gb/s/wire Single-Ended Simultaneous Bi-Directional Transceiver with Dynamic Equalizer for Die-to-Die Interface in 28nm CMOS

  • Zhiwen Huang
  • , Zhifei Wang
  • , Bingyi Ye
  • , Tianchen Ye
  • , Dunshan Yu
  • , Wei Wang
  • , Weixin Gai
  • Peking University
  • Beijing Advanced Innovation Center for Integrated Circuits

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work presents an 8-lane 112Gb/s/wire single-ended simultaneous bi-directional transceiver with a 3mm shield-less on-chip channel. A dynamic equalizer is proposed to decouple the bi-directional signals, and compensate for insertion loss and crosstalk. Fabricated in 28nm CMOS, the transceiver achieves a BER of less than 10-14, and an energy efficiency of 1.01pJ/b.

Original languageEnglish
Title of host publication2026 IEEE International Solid-State Circuits Conference, ISSCC 2026
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages140-142
Number of pages3
ISBN (Electronic)9798331589363
DOIs
StatePublished - 2026
Event2026 IEEE International Solid-State Circuits Conference, ISSCC 2026 - San Francisco, United States
Duration: 15 Feb 202619 Feb 2026

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume69
ISSN (Print)0193-6530

Conference

Conference2026 IEEE International Solid-State Circuits Conference, ISSCC 2026
Country/TerritoryUnited States
CitySan Francisco
Period15/02/2619/02/26

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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