A 10 nm Short Channel MoS₂ Transistor without the Resolution Requirement of Photolithography

MoS₂ is considered a promising candidate as a channel material for the next generation semiconductor devices owing to its atomic thickness and electrical properties. However, due to the limited resolution of the photolithography, the short channel length MoS₂ transistor is still inclusive. In this work, a method to fabricate MoS₂ transistors with short channel length is demonstrated, which is realized by the self-oxidization of aluminum to form an effective isolation between the source and drain electrodes. By this method, 10 nm transistors with 3.65 nm thick multilayer MoS₂ are realized. Despite the short channel length, the devices still exhibit a good on/off ratio. Both the transmission electron microscope image and electrical characteristics reveal the realization of 10 nm short channel, and the simulation results also prove it. Throughout aluminum self-oxidization technology, transistors with 10 nm channel length can be defined by lithography with 100 nm precision. The 2D transistors with self-oxidized short channel length reduce the threshold of the 10 nm channel's fabrication, and provide new opportunities for scaling down the 2D material-based transistors.