A 0.8-2.5GHz wideband SiGe BiCMOS low noise amplifier with noise fiugre of 1.98-3.3dB

Lin Hua; Qiong Yan; Lei Chen; Runxi Zhang; Chunqi Shi; Zongsheng Lai

doi:10.1109/ASICON.2011.6157397

A 0.8-2.5GHz wideband SiGe BiCMOS low noise amplifier with noise fiugre of 1.98-3.3dB

Lin Hua^*
, Qiong Yan
, Lei Chen
, Runxi Zhang
, Chunqi Shi
, Zongsheng Lai

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

This paper presents an optimized 0.8-2.5GHz low noise amplifier for wideband applications. Based on cascade structure, a shunt resistive feedback with an emitter degeneration inductor is used. Both low noise figure and high gain are achieved simultaneously. Measured results show that the proposed LNA has a maximum gain of 19.6dB at 0.8GHz and a minimum gain of 14.3dB at 2.5GHz. The noise figure varies from 1.98 to 3.3dB among the whole band. The overall power supply is 24mw at 3V supply and the occupied die area is only 0.4mm ².

Original language	English
Title of host publication	Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011
Pages	1086-1089
Number of pages	4
DOIs	https://doi.org/10.1109/ASICON.2011.6157397
State	Published - 2011
Event	2011 IEEE 9th International Conference on ASIC, ASICON 2011 - Xiamen, China Duration: 25 Oct 2011 → 28 Oct 2011

Publication series

Name	Proceedings of International Conference on ASIC
ISSN (Print)	2162-7541
ISSN (Electronic)	2162-755X

Conference

Conference	2011 IEEE 9th International Conference on ASIC, ASICON 2011
Country/Territory	China
City	Xiamen
Period	25/10/11 → 28/10/11

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10.1109/ASICON.2011.6157397

Cite this

@inproceedings{1564a074bf6649a585585db6eef9cf71,

title = "A 0.8-2.5GHz wideband SiGe BiCMOS low noise amplifier with noise fiugre of 1.98-3.3dB",

abstract = "This paper presents an optimized 0.8-2.5GHz low noise amplifier for wideband applications. Based on cascade structure, a shunt resistive feedback with an emitter degeneration inductor is used. Both low noise figure and high gain are achieved simultaneously. Measured results show that the proposed LNA has a maximum gain of 19.6dB at 0.8GHz and a minimum gain of 14.3dB at 2.5GHz. The noise figure varies from 1.98 to 3.3dB among the whole band. The overall power supply is 24mw at 3V supply and the occupied die area is only 0.4mm 2.",

author = "Lin Hua and Qiong Yan and Lei Chen and Runxi Zhang and Chunqi Shi and Zongsheng Lai",

year = "2011",

doi = "10.1109/ASICON.2011.6157397",

language = "英语",

isbn = "9781612841908",

series = "Proceedings of International Conference on ASIC",

pages = "1086--1089",

booktitle = "Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011",

note = "2011 IEEE 9th International Conference on ASIC, ASICON 2011 ; Conference date: 25-10-2011 Through 28-10-2011",

}

Hua, L, Yan, Q, Chen, L, Zhang, R , Shi, C & Lai, Z 2011, A 0.8-2.5GHz wideband SiGe BiCMOS low noise amplifier with noise fiugre of 1.98-3.3dB. in Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011., 6157397, Proceedings of International Conference on ASIC, pp. 1086-1089, 2011 IEEE 9th International Conference on ASIC, ASICON 2011, Xiamen, China, 25/10/11. https://doi.org/10.1109/ASICON.2011.6157397

A 0.8-2.5GHz wideband SiGe BiCMOS low noise amplifier with noise fiugre of 1.98-3.3dB. / Hua, Lin; Yan, Qiong; Chen, Lei et al.
Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011. 2011. p. 1086-1089 6157397 (Proceedings of International Conference on ASIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hua, Lin

AU - Yan, Qiong

AU - Chen, Lei

AU - Zhang, Runxi

AU - Shi, Chunqi

AU - Lai, Zongsheng

PY - 2011

Y1 - 2011

N2 - This paper presents an optimized 0.8-2.5GHz low noise amplifier for wideband applications. Based on cascade structure, a shunt resistive feedback with an emitter degeneration inductor is used. Both low noise figure and high gain are achieved simultaneously. Measured results show that the proposed LNA has a maximum gain of 19.6dB at 0.8GHz and a minimum gain of 14.3dB at 2.5GHz. The noise figure varies from 1.98 to 3.3dB among the whole band. The overall power supply is 24mw at 3V supply and the occupied die area is only 0.4mm 2.

AB - This paper presents an optimized 0.8-2.5GHz low noise amplifier for wideband applications. Based on cascade structure, a shunt resistive feedback with an emitter degeneration inductor is used. Both low noise figure and high gain are achieved simultaneously. Measured results show that the proposed LNA has a maximum gain of 19.6dB at 0.8GHz and a minimum gain of 14.3dB at 2.5GHz. The noise figure varies from 1.98 to 3.3dB among the whole band. The overall power supply is 24mw at 3V supply and the occupied die area is only 0.4mm 2.

UR - https://www.scopus.com/pages/publications/84860852649

U2 - 10.1109/ASICON.2011.6157397

DO - 10.1109/ASICON.2011.6157397

M3 - 会议稿件

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T3 - Proceedings of International Conference on ASIC

SP - 1086

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BT - Proceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011

T2 - 2011 IEEE 9th International Conference on ASIC, ASICON 2011

Y2 - 25 October 2011 through 28 October 2011

ER -

A 0.8-2.5GHz wideband SiGe BiCMOS low noise amplifier with noise fiugre of 1.98-3.3dB

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