A 0.18μm CMOS LNA for UHF-RFID reader application

Yuan Ying Chen; Run Xi Zhang; Chun Qi Shi; Zong Sheng Lai

doi:10.1109/ICSICT.2006.306321

A 0.18μm CMOS LNA for UHF-RFID reader application

Yuan Ying Chen^*
, Run Xi Zhang
, Chun Qi Shi
, Zong Sheng Lai

^*Corresponding author for this work

School of Communication and Electronic Engineering

East China Normal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

CMOS technologies are widely exploited in the area of GHz RF circuits as well as in the area of baseband circuits. Accordingly, CMOS LNA is gaining its popularity from applications such as GSM, PCS, and WLAN. In this paper, a novel low power consumption and high gain LNA for UHF-RFID (ultra high frequency-radio frequency identification) reader is presented. Basic analysis is introduced using those equations derived. Using these analyses, the stack style single-end structure with LC resonator using on-chip spiral inductor is investigated. This LNA exhibits power gain about 20.4dB and noise figure of 1.6dB while drawing 1mA current from 1.8V supply voltage under TSMC 0.18μm RF-CMOS process. The reverse isolation is about -36.7 dB.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Publisher	IEEE Computer Society
Pages	1592-1594
Number of pages	3
ISBN (Print)	1424401615, 9781424401611
DOIs	https://doi.org/10.1109/ICSICT.2006.306321
State	Published - 2006
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 23 Oct 2006 → 26 Oct 2006

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	23/10/06 → 26/10/06

Keywords

CMOS LNA UHF-RFID

Access to Document

10.1109/ICSICT.2006.306321

Cite this

Chen, Y. Y., Zhang, R. X., Shi, C. Q., & Lai, Z. S. (2006). A 0.18μm CMOS LNA for UHF-RFID reader application. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1592-1594). Article 4098482 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). IEEE Computer Society. https://doi.org/10.1109/ICSICT.2006.306321

Chen, Yuan Ying ; Zhang, Run Xi ; Shi, Chun Qi et al. / A 0.18μm CMOS LNA for UHF-RFID reader application. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. pp. 1592-1594 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{9f5d2e773d4c465388614a91190038d1,

title = "A 0.18μm CMOS LNA for UHF-RFID reader application",

abstract = "CMOS technologies are widely exploited in the area of GHz RF circuits as well as in the area of baseband circuits. Accordingly, CMOS LNA is gaining its popularity from applications such as GSM, PCS, and WLAN. In this paper, a novel low power consumption and high gain LNA for UHF-RFID (ultra high frequency-radio frequency identification) reader is presented. Basic analysis is introduced using those equations derived. Using these analyses, the stack style single-end structure with LC resonator using on-chip spiral inductor is investigated. This LNA exhibits power gain about 20.4dB and noise figure of 1.6dB while drawing 1mA current from 1.8V supply voltage under TSMC 0.18μm RF-CMOS process. The reverse isolation is about -36.7 dB.",

keywords = "CMOS LNA UHF-RFID",

author = "Chen, \{Yuan Ying\} and Zhang, \{Run Xi\} and Shi, \{Chun Qi\} and Lai, \{Zong Sheng\}",

year = "2006",

doi = "10.1109/ICSICT.2006.306321",

language = "英语",

isbn = "1424401615",

series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "IEEE Computer Society",

pages = "1592--1594",

booktitle = "ICSICT-2006",

address = "美国",

note = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

}

Chen, YY, Zhang, RX , Shi, CQ & Lai, ZS 2006, A 0.18μm CMOS LNA for UHF-RFID reader application. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098482, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, IEEE Computer Society, pp. 1592-1594, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 23/10/06. https://doi.org/10.1109/ICSICT.2006.306321

A 0.18μm CMOS LNA for UHF-RFID reader application. / Chen, Yuan Ying; Zhang, Run Xi ; Shi, Chun Qi et al.
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, 2006. p. 1592-1594 4098482 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A 0.18μm CMOS LNA for UHF-RFID reader application

AU - Chen, Yuan Ying

AU - Zhang, Run Xi

AU - Shi, Chun Qi

AU - Lai, Zong Sheng

PY - 2006

Y1 - 2006

N2 - CMOS technologies are widely exploited in the area of GHz RF circuits as well as in the area of baseband circuits. Accordingly, CMOS LNA is gaining its popularity from applications such as GSM, PCS, and WLAN. In this paper, a novel low power consumption and high gain LNA for UHF-RFID (ultra high frequency-radio frequency identification) reader is presented. Basic analysis is introduced using those equations derived. Using these analyses, the stack style single-end structure with LC resonator using on-chip spiral inductor is investigated. This LNA exhibits power gain about 20.4dB and noise figure of 1.6dB while drawing 1mA current from 1.8V supply voltage under TSMC 0.18μm RF-CMOS process. The reverse isolation is about -36.7 dB.

AB - CMOS technologies are widely exploited in the area of GHz RF circuits as well as in the area of baseband circuits. Accordingly, CMOS LNA is gaining its popularity from applications such as GSM, PCS, and WLAN. In this paper, a novel low power consumption and high gain LNA for UHF-RFID (ultra high frequency-radio frequency identification) reader is presented. Basic analysis is introduced using those equations derived. Using these analyses, the stack style single-end structure with LC resonator using on-chip spiral inductor is investigated. This LNA exhibits power gain about 20.4dB and noise figure of 1.6dB while drawing 1mA current from 1.8V supply voltage under TSMC 0.18μm RF-CMOS process. The reverse isolation is about -36.7 dB.

KW - CMOS LNA UHF-RFID

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U2 - 10.1109/ICSICT.2006.306321

DO - 10.1109/ICSICT.2006.306321

M3 - 会议稿件

AN - SCOPUS:34547318128

SN - 1424401615

SN - 9781424401611

T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 1592

EP - 1594

BT - ICSICT-2006

PB - IEEE Computer Society

T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 23 October 2006 through 26 October 2006

ER -

Chen YY, Zhang RX , Shi CQ, Lai ZS. A 0.18μm CMOS LNA for UHF-RFID reader application. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society. 2006. p. 1592-1594. 4098482. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2006.306321

A 0.18μm CMOS LNA for UHF-RFID reader application

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