TY - GEN
T1 - 105× Endurance Improvement of FE-HZO by an Innovative Rejuvenation Method for 1z Node NV-DRAM Applications
AU - Gong, Tiancheng
AU - Tao, Lei
AU - Li, Junkang
AU - Cheng, Yan
AU - Xu, Yannan
AU - Wei, Wei
AU - Jiang, Pengfei
AU - Yuan, Peng
AU - Wang, Yuan
AU - Chen, Yuting
AU - Ding, Yaxin
AU - Yang, Yang
AU - Wang, Yan
AU - Chen, Bing
AU - Luo, Qing
AU - Chung, Steve S.
AU - Du, Shixuan
AU - Liu, Ming
N1 - Publisher Copyright:
© 2021 JSAP
PY - 2021
Y1 - 2021
N2 - High operating voltage and low endurance are obstacles for FE HZO to be a viable candidate for NV-DRAM technology. In this work, we provide a breakthrough solution for HZO towards 1z node NV-DRAM application. Firstly, the endurance failure mechanism of HZO film under low-electric field (<1.5MV/cm) is systematically investigated by electrical characterizations, DFT calculations and STEM-ABF technique. It is found that fatigue under low-electric field is relevant to the electron de-trapping rather than defect generation. Furthermore, based on the new insight on the failure mechanism, a novel rejuvenation method is proposed. Five orders of endurance enhancement can be achieved. The excellent properties including low operating voltage (1.1V), non-volatile and fairly high endurance (>1014) are quite promising towards 1z node NV-DRAM applications.
AB - High operating voltage and low endurance are obstacles for FE HZO to be a viable candidate for NV-DRAM technology. In this work, we provide a breakthrough solution for HZO towards 1z node NV-DRAM application. Firstly, the endurance failure mechanism of HZO film under low-electric field (<1.5MV/cm) is systematically investigated by electrical characterizations, DFT calculations and STEM-ABF technique. It is found that fatigue under low-electric field is relevant to the electron de-trapping rather than defect generation. Furthermore, based on the new insight on the failure mechanism, a novel rejuvenation method is proposed. Five orders of endurance enhancement can be achieved. The excellent properties including low operating voltage (1.1V), non-volatile and fairly high endurance (>1014) are quite promising towards 1z node NV-DRAM applications.
UR - https://www.scopus.com/pages/publications/85124174235
M3 - 会议稿件
AN - SCOPUS:85124174235
T3 - Digest of Technical Papers - Symposium on VLSI Technology
BT - 2021 Symposium on VLSI Technology, VLSI Technology 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 41st Symposium on VLSI Technology, VLSI Technology 2021
Y2 - 13 June 2021 through 19 June 2021
ER -