Abstract
The paper focuses on analyzing the effects and principles of the capacitance and inductance peaking technology in 10 Gb/s HEMT external modulator driver module. Based on the accurate microwave monolithic integrate circuit (MMIC) inductance equivalent circuit model, the effect of inductive compensation to the gain and bandwidth of driver module is discussed. By using the technology of gate inductive peaking and drain inductive peaking, the fT of HEMT device used in driver module reduce evidently from 54 GHz to 35 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 272-277 |
| Number of pages | 6 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4603 |
| DOIs | |
| State | Published - 2001 |
| Externally published | Yes |
| Event | Fiber Optics and Optoelectronics for Network Applications - Nanjing, China Duration: 7 Nov 2001 → 9 Nov 2001 |
Keywords
- Capacitive and inductive compensation
- Driver
- External modulator
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