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10 Gb/s external modulator module using capacitive and inductive peaking technology

  • Bo Pan*
  • , Jianjun Gao
  • , Baoxin Gao
  • *Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The paper focuses on analyzing the effects and principles of the capacitance and inductance peaking technology in 10 Gb/s HEMT external modulator driver module. Based on the accurate microwave monolithic integrate circuit (MMIC) inductance equivalent circuit model, the effect of inductive compensation to the gain and bandwidth of driver module is discussed. By using the technology of gate inductive peaking and drain inductive peaking, the fT of HEMT device used in driver module reduce evidently from 54 GHz to 35 GHz.

Original languageEnglish
Pages (from-to)272-277
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4603
DOIs
StatePublished - 2001
Externally publishedYes
EventFiber Optics and Optoelectronics for Network Applications - Nanjing, China
Duration: 7 Nov 20019 Nov 2001

Keywords

  • Capacitive and inductive compensation
  • Driver
  • External modulator

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