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近表面加工技术制备的高性能Ge:B 阻挡杂质带探测器

Translated title of the contribution: High performance Ge:B blocked impurity band detector developed using near-surface processing techniques
  • Chang Yi Pan
  • , Hao Mou
  • , Xiao Mei Yao
  • , Tao Hu
  • , Yu Wang
  • , Chao Wang
  • , Hui Yong Deng*
  • , Ning Dai*
  • *Corresponding author for this work
  • CAS - Shanghai Institute of Technical Physics
  • University of Chinese Academy of Sciences

Research output: Contribution to journalArticlepeer-review

Abstract

Blocked impurity band(BIB)detectors are the state-of-the-art choice for far infrared astronomical ob-servation. Ge: B BIB far infrared detector has been successfully developed using near-surface processing tech-niques. The spectral response covers a wide range from 50 cm-1 to 400 cm-1. At a temperature of 3. 5 K and a working voltage of 30 mV, the detector exhibits a highly competitive responsivity of 21. 46 A∙W-1 and a highly competitive detectivity of 4. 34×1014 cm∙Hz1/2∙W-1 at the peak response of 84. 9 cm-1. The influence of the interfacial barriers on the spectral response is investigated. A new excitation model that the carriers in the contact regions can be excited over the interfacial barriers is proposed. Moreover, a new method to enhance the relative response intensity of BIB detectors in the low wavenumber region is found.

Translated title of the contributionHigh performance Ge:B blocked impurity band detector developed using near-surface processing techniques
Original languageChinese (Traditional)
Pages (from-to)389-394
Number of pages6
JournalHongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume41
Issue number2
DOIs
StatePublished - Apr 2022
Externally publishedYes

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